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Article
Open AccessEnergy barriers at grain boundaries dominate charge carrier transport in an electron-conductive organic semiconductor
Semiconducting organic films that are at the heart of light-emitting diodes, solar cells and transistors frequently contain a large number of morphological defects, most prominently at the interconnects betwee...
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Article
A novel approach for increasing the strength of an Au/Si eutectic bonded interface on an oxidized silicon surface
The use of tantalum as adhesion layer for Au/Si eutectic bonding was investigated and compared to the frequently used materials chromium or titanium in the case of oxidized silicon substrates. Suitable test st...
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Article
Application of micromechanical resonant structures for measuring the sealing of bonded sensor systems
This paper describes the application of a new method to verify the pressure and sealing of cavities in micromechanical components. The new method makes it possible to measure the pressure and the sealing (thro...
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Article
Infrared spectroscopic characterization of the buried interface and surfaces of bonded silicon wafers
Basic investigations have been carried out on the characterization of different processing steps in bond preparation using etched <111> faces of silicon wafers for the incidence of the infrared beam to a mult...
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Article
Technology tools for a high precision accelerometer in bulk micromechanics
The high precision accelerometer consists of 5 silicon wafers and packages by silicon fusion bonding. The sensor has a capacitance measuring principle and works in an open loop or closed loop operation mode. T...
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Chapter and Conference Paper
Micromechanical Acceleration Sensor
A miniature silicon acceleration sensor has been developed, consisting of a capacitive accelerometer and a electronic system. A seismic mass suspended by thin bars is used as sensing element. Signal conversion...
