Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors
From Materials to Devices
Book
Chapter
Multilayer self-assembled InAs/GaAs QD
Chapter
Mid-wavelength infrared (MWIR) ~3–5 μm and long-wavelength infrared (LWIR) ~8–14 μm detectors and FPAs are important in a variety of commercial, military and space applications, e.g., night vision, thermal ima...
Chapter
The summary and conclusions of the whole work and its future application was discussed in this chapter. In summary, we have started this monograph with a study of different structural and optical properties of...
Chapter
Quantum-dot (QD) infrared photodetectors and focal-plane array (FPA) cameras have wide application in fields such as astronomy, military and defence, space science and medical diagnosis. Due to their three-dim...
Chapter
The InAs/GaAs quantum dots are grown by S-K growth method using molecular beam epitaxy. As-grown defects are always there in samples. Post-growth rapid thermal annealing is one of the key techniques to remove ...
Chapter
In the Stranski-Krastanow growth mode, QD size and shape can be controlled by parameters such as the amount of deposited material and the growth ratio, growth temperature, growth rate and monolayer coverage. S...