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14 Result(s)

within S.L. Gu Remove this filter Characterization and Evaluation of Materials Remove this filter Optical and Electronic Materials Remove this filter

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  1. No Access

    Article

    Room-temperature ferromagnetism in Mn-N Co-doped p-ZnO epilayers by metal-organic chemical vapor deposition

    Mn-N co-doped Zn epilayers were grown by metal-organic chemical vapor deposition. The Mn-N co-doped epilayers exhibit single phase hexagonal wurtzite structure, indicative of the small lattice damage from co-d...

    S.M. Liu, S.L. Gu, J.D. Ye, S.M. Zhu, W. Liu, K. Tang, Z.P. Shan… in Applied Physics A (2008)

  2. No Access

    Article

    Charge storage characteristics in Al/AlN/Si metal–insulator–semiconductor structure based on deep traps in AlN layer

    Charge storage characteristics in an Al/AlN/p-Si metal–insulator–semiconductor (MIS) structure have been investigated by capacitance–voltage and long-term capacitance measurements. Good program/erase behavior ...

    Y.C. Kong, L.Q. Hu, Y.D. Zheng, C.H. Zhou, C. Chen, S.L. Gu, R. Zhang… in Applied Physics A (2008)

  3. No Access

    Article

    Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures

    The dependence of two-dimensional electron gas (2DEG) density and distribution in an AlxGa1-xN/AlN/GaN heterostructure on the thicknesses of the AlxGa1-xN barrier layer and the AlN interfacial layer are investiga...

    Y.C. Kong, Y.D. Zheng, C.H. Zhou, S.L. Gu, R. Zhang, P. Han, Y. Shi… in Applied Physics A (2006)

  4. No Access

    Article

    Correlation between green luminescence and morphology evolution of ZnO films

    Photoluminescence and atomic force microscopy have been used to characterize ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) at varied growth pressures. The surface morphology with diff...

    J.D. Ye, S.L. Gu, F. Qin, S.M. Zhu, S.M. Liu, X. Zhou, W. Liu, L.Q. Hu… in Applied Physics A (2005)

  5. No Access

    Article

    MOCVD growth and properties of ZnO films using dimethylzinc and oxygen

    The ZnO films were grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) using dimethylzinc (DMZn) and oxygen. The as-grown film has strong (0002) oriented characteristic, containing the cha...

    J.D. Ye, S.L. Gu, F. Qin, S.M. Zhu, S.M. Liu, X. Zhou, W. Liu, L.Q. Hu… in Applied Physics A (2005)

  6. No Access

    Article

    Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal–organic chemical vapor deposition

    The GaN-rich side of GaNP ternary alloys has been successfully synthesized by light-radiation heating and low-pressure metal–organic chemical vapor deposition. X-ray diffraction (XRD) rocking curves show that ...

    D.J. Chen, B. Shen, Z.X. Bi, K.X. Zhang, S.L. Gu, R. Zhang, Y. Shi… in Applied Physics A (2005)

  7. No Access

    Article

    Dielectric properties of AlN film on Si substrate

    AlN films were deposited on p-Si(1 1 1) substrates by a low-pressure metal–organic chemical vapor deposition (MOCVD) system and an Al–AlN–Si (MIS) capacitor was then prepared with the AlN layer as the insulato...

    Z. X. Bi, Y. D. Zheng, R. Zhang, S. L. Gu… in Journal of Materials Science: Materials in… (2004)

  8. No Access

    Article

    Substrate temperature dependence of properties of ZnO thin films deposited by LP-MOCVD

    ZnO films were prepared on (0002) sapphire by metal-organic chemical vapor deposition (MOCVD) with fixed Zn and O gas flow rates. The film properties displayed complex dependencies on temperature over the rang...

    J.D. Ye, S.L. Gu, S.M. Zhu, F. Qin, L.Q. Hu, L. Ren, R. Zhang, Y. Shi… in Applied Physics A (2004)

  9. No Access

    Article

    Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors

    In this letter, we investigate the carrier features in AlGaN/InGaN/GaN heterostructure field-effect transistors. A study of charge control in the AlGaN/InGaN/GaN structure is performed by self-consistently sol...

    R.M. Chu, Y.D. Zheng, Y.G. Zhou, S.L. Gu, B. Shen, R. Zhang… in Applied Physics A (2003)

  10. No Access

    Article

    Impurity effects on photoluminescence in lateral epitaxially overgrown GaN

    Using a two-photon laser-scanning microscope (LSM), the spectral and intensity variations of photoluminescence (PL) in a lateral epitaxially overgrown GaN film were mapped with submicron resolution. The PL res...

    J. W. P. Hsu, F. F. Schrey, M. J. Matthews, S. L. Gu… in Journal of Electronic Materials (2003)

  11. No Access

    Article

    Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

    The two-dimensional electron gas distribution in AlGaN/GaN high electron mobility transistors is determined from the solution of the coupled Schrödinger’s and Poisson’s equations. Considering the piezoelectric...

    R.M. Chu, Y.D. Zheng, Y.G. Zhou, P. Han, B. Shen, S.L. Gu in Applied Physics A (2002)

  12. No Access

    Article

    Fabrication of silicon nanowires

    at 750 °C and 850 °C. The oxide and interface morphology are characterized by cross-sectional scanning electron microscope images. It is found that the oxidized nanowire following oxidation at 750 °C still ke...

    J.L. Liu, Y. Lu, Y. Shi, S.L. Gu, R.L. Jiang, F. Wang, Y.D. Zheng in Applied Physics A (1998)

  13. No Access

    Article

    Realization of silicon quantum wires by selective chemical etching and thermal oxidation

    Ultra-fine silicon quantum wires with SiO2 boundaries were successfully fabricated by combining SiGe/Si heteroepitaxy, selective chemical etching and subsequent thermal oxidation. The results are observed by scan...

    J. L. Liu, Y. Shi, F. Wang, Y. Lu, R. Zhang, S. L. Gu, P. Han… in Applied Physics A (1996)

  14. No Access

    Article

    Ellipsometric studies of porous silicon

    Multiple-angle-of-incidence (MAI) ellipsometry at 632.8 nm is used to characterize P and P+ porous silicon of high porosity. Complex dielectric constants are obtained, from which the porosity can be estimated qua...

    L. H. Qin, Y. D. Zheng, R. Zhang, S. L. Gu, H. T. Shi, D. Feng in Applied Physics A (1994)