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  1. No Access

    Article

    Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K

    The electroluminescence of InAs/InAsSbP and InAsSb/InAsSbP LED heterostructures grown on InAs substrates is studied in the temperature range T = 4.2–300 K. At low temperatures (T = 4.2–100 K), stimulated emission...

    K. D. Mynbaev, N. L. Bazhenov, A. A. Semakova, M. P. Mikhailova… in Semiconductors (2017)

  2. No Access

    Article

    Electrical and electroluminescent properties of InAsSb-Based LEDs (λ = 3.85–3.95 μm) in the temperature interval 20–200°C

    The temperature dependences of the electrical and electroluminescent properties of InAsSbP/InAsSb/InAsSbP heterostructure LEDs (λ ≈ 3.8−4.0 μm) are studied in the temperature interval 20–200°C. It is shown tha...

    A. A. Petukhov, S. S. Kizhaev, S. S. Molchanov, N. D. Stoyanov… in Technical Physics (2012)

  3. No Access

    Article

    Electroluminescent characteristics of InGaAsSb/GaAlAsSb heterostructure Mid-IR LEDs at high temperatures

    The electroluminescent characteristics of an InGaAsSb/GaAlAsSb heterostructure LED emitting at 1.85 μm are studied in the temperature range 20–200°C. It is shown that the emission power exponentially drops as P ≅...

    A. A. Petukhov, B. E. Zhurtanov, S. S. Molchanov, N. D. Stoyanov… in Technical Physics (2011)

  4. No Access

    Article

    Portable optical water-and-oil analyzer based on a mid-IR (1.6–2.4 μm) optron consisting of an LED array and a wideband photodiode

    An optical method for measuring the water and oil content using mid-IR (1.6–2.4 μm) LEDs and a wideband photodiode is suggested for the first time. This method is developed based on the absorption spectra of p...

    K. V. Kalinina, S. S. Molchanov, N. D. Stoyanov, A. P. Astakhova… in Technical Physics (2010)

  5. No Access

    Article

    Interfacial and interband lasing in an AnAs/InAsSbP heterostructure grown by vapor-phase epitaxy from metal-organic compounds

    Sources of coherent radiation are fabricated on the basis of a double InAs/InAsSbP heterostructure, grown by vapor-phase epitaxy from metal-organic compounds, that includes a thick (3.3μm) active region. The s...

    A. P. Astakhova, N. D. Il’inskaya, A. N. Imenkov, S. S. Kizhaev… in Semiconductors (2005)

  6. No Access

    Article

    Simultaneous interface and interband lasing in InAs/InAsSbP heterostructures grown by metalorganic vapor phase epitaxy

    Coherent radiation sources have been manufactured based on double heterostructures of the InAs/InAsSbP type grown by metalorganic vapor-phase epitaxy. The mode composition of the lasing spectrum is determined ...

    A. P. Astakhova, N. D. Il’inskaya, A. N. Imenkov… in Technical Physics Letters (2004)

  7. No Access

    Article

    MOCVD growth and Mg-do** of InAs layers

    Epitaxial layers of Mg-doped InAs were grown by MOCVD, and electrical properties of these layers were studied. The do** with magnesium in the course of MOCVD growth allows one to obtain strongly compensated p-I...

    T. I. Voronina, T. S. Lagunova, S. S. Kizhayev, S. S. Molchanov… in Semiconductors (2004)

  8. No Access

    Article

    Characterization of light-emitting diodes based on InAsSbP/InAsSb structures grown by metal-organic vapor-phase epitaxy

    Light-emitting diodes for the wavelength range λ=3.3–4.5 µm were fabricated on the basis of InAsSbP/InAsSb heterostructures grown by metal-organic vapor-phase epitaxy. The use of vapor-phase epitaxy made it po...

    N. V. Zotova, S. S. Kizhaev, S. S. Molchanov, T. I. Voronina… in Semiconductors (2003)

  9. No Access

    Article

    Broken-gap heterojunction in the p-GaSb-n-InAs1−x Sbx(0≤x≤0.18) system

    Epitaxial InAs1−x Sbx layers with the Sb content 0≤x≤0.18 were grown by metalorganic vapor phase epitaxy (MOVPE) on p-GaSb and n-InAs substrates. The photoluminescence (PL) spectra of the heterostructures were me...

    S. S. Kizhaev, S. S. Molchanov, N. V. Zotova… in Technical Physics Letters (2001)

  10. No Access

    Article

    InAs/InAsSbP light-emitting structures grown by gas-phase epitaxy

    Using the metal-organic chemical vapor decomposition technique, light-emitting diodes based on InAs/InAsSbP double heterostructures emitting in a wavelength range around 3.3 µm have been fabricated. The extern...

    E. A. Grebenshchikova, N. V. Zotova, S. S. Kizhaev, S. S. Molchanov… in Technical Physics (2001)

  11. No Access

    Article

    Long-wavelength light-emitting diodes (λ=3.4–3.9 µm) based on InAsSb/InAs heterostructures grown by vapor-phase epitaxy

    InAs/InAs0.93Sb0.07/InAs heterostructures were grown by metal-organic vapor-phase epitaxy in a horizontal reactor at atmospheric pressure. Based on the obtained structures, light-emitting diodes operating at λ=3....

    N. V. Zotova, S. S. Kizhaev, S. S. Molchanov, T. B. Popova… in Semiconductors (2000)

  12. No Access

    Article

    Luminescence properties of InAs layers and p-n structures grown by metallorganic chemical vapor deposition

    The luminescence properties of p-and n-type InAs layers grown by gas-phase epitaxy from metallorganic compounds at atmospheric pressure are investigated. Acceptor levels in InAs are identified with energies 350, ...

    T. I. Voronina, N. V. Zotova, S. S. Kizhayev, S. S. Molchanov… in Semiconductors (1999)

  13. No Access

    Article

    680 Mev synchrotron of the Institute of Physics, Academy of Sciences, USSR

    A description is given of the construction and operation of the synchrotron at the P. N. Lebedev Institute of Physics, Academy of Sciences, USSR, which has a maximum electron energy of 680 Mev. Results are giv...

    A. I. Gryaznov, Yu. N. Metal'nikov, S. S. Molchanov, G. V. Novikova… in Soviet Atomic Energy (1963)