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Article
Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K
The electroluminescence of InAs/InAsSbP and InAsSb/InAsSbP LED heterostructures grown on InAs substrates is studied in the temperature range T = 4.2–300 K. At low temperatures (T = 4.2–100 K), stimulated emission...
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Article
Frequency tuning due to nonlinear effects in whispering gallery mode laser based on InAsSb/InAsSbP heterostructure
Frequency tunable infrared whispering gallery mode (WGM) semiconductor laser with a disk cavity has been created that operates at a wavelength of 3.5 μm at a temperature of 79 K. The laser radiation spectra ha...
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Article
High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ≈ 3.3 μm)
Two designs of light-emitting diodes (LEDs) based on InAsSbP/InAs/InAsSbP double hetero-structures grown by metal-organic vapor phase epitaxy on p− and n-InAs substrates have been studied. The current-voltage and...
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Article
Portable optical water-and-oil analyzer based on a mid-IR (1.6–2.4 μm) optron consisting of an LED array and a wideband photodiode
An optical method for measuring the water and oil content using mid-IR (1.6–2.4 μm) LEDs and a wideband photodiode is suggested for the first time. This method is developed based on the absorption spectra of p...
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Article
LEDs based on InAs/InAsSb heterostructures for CO2 spectroscopy (λ = 4.3 μm)
Light-emitting diodes (LEDs) operating in a 4.1–4.3 μm wavelength range have been created on the basis of InAs/InAsSb heterostructures grown by metalorganic vapor-phase epitaxy. The output radiation power of L...
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Article
Frequency-tuned semiconductor whispering-gallery-mode laser (λ = 2.35 µm) operating at room temperature
Frequency tuning in a whispering gallery mode (WGM) semiconductor laser (λ = 2.35 µm) with a sector (half-disk) cavity has been studied. Pum** by current pulses with a duration of up to 1.2 µs is accompanied...
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Article
A semiconductor whispering-gallery-mode laser with ring cavity operating at room temperature
Whispering gallery mode (WGM) semiconductor lasers with ring and disk cavities (outside diameters 300, 200, and 100 μm) operating in a pulsed regime at room temperature on a λ = 2.4 μm wavelength have been cre...
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Article
The temperature dependence of internal parameters of disc laser diodes InAs/InAsSbP
For disc lasers based on the InAs/InAsSbP heterostructure with a generation wavelength of 3.03–3.06 μm, the internal quantum yield of luminescence and rates of radiative and nonradiative recombination in a tem...
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Article
Photodiodes based on n-GaSb/n-GaInAsSb/p-AlGaAsSb heterostructures grown using rare-earth elements for the 1.1–2.4 μm spectral range
Photodiodes sensitive in the wavelength range of 1.1–2.4 μm have been created based on n-GaSb/n-GaInAsSb/p-AlGaAsSb heterostructures with a narrow-gap n-GaInAsSb layer (E ...
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Article
Continuous-wave disk WGM lasers (λ = 3.0 μm) based on InAs/InAsSbP heterostructures
IR semiconductor WGM lasers operating in the continuous-wave (CW) mode at a wavelength of 3.04 μm have been fabricated by metal-organic vapor-phase epitaxy on the basis of InAs/InAsSbP heterostructures. Their ...
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Article
Observation of whispering gallery modes in lasers with cut disk cavities
Whispering gallery modes (WGMs) have been observed in lasers with cut disk (half-and quarterdisk) cavities operating at room temperature in the 2.0–2.4 μm wavelength range. The possibility of WGM generation in...
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Article
Infrared whispering-gallery-mode lasers (λ= 2.4 μm) with convex disk cavity operating at room temperature
A whispering gallery mode (WGM) semiconductor laser with a convex disk cavity operating at room temperature in the middle-IR range (λ = 2.4 μm) has been created for the first time. The convex cavity was formed...
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Article
Ultrafast frequency tuning in diode lasers based on InAsSb/InAsSbP heterostructures operating in the 3–4 μm spectral range
We have studied the quality of frequency of tuning in a diode laser based on a double heterostructures of the n-InAsSbP/n-InAsSb/p-InAsSbP type driven by short current pulses with positive ramp top. It is establi...
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Article
Optical parameters of diode lasers based on an InAsSb/InAsSbP heterostructure
The rates of radiative recombination (including transitions induced by enhanced luminescence) and nonradiative recombination, internal quantum yield of luminescence, and the matrix element for band-to-band opt...
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Article
Impact-ionization-stimulated electroluminescence in isotype n-GaSb/n-AlGaAsSb/n-GaInAsSb heterostructures
We have studied electroluminescence in n-GaSb/n-AlGaAsSb/n-GaInAsSb heterostructures with isotype heterojunctions, in which the quantum efficiency of emission is increased due to the additional production of elec...
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Article
Improving parameters of GaSb/GaInAsSb/AlGaAsSb photodiode structures with thin active regions for the 1.0–2.5 μm wavelength range
We have studied and optimized the properties of photodiodes with a red photosensitivity threshold at 2.5 μm, which have been created on the basis of GaSb/GaInAsSb/AlGaAsSb heterostructures with Ga0.76In0.24As0.22
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Article
High-efficiency LEDs based on n-GaSb/p-GaSb/n-GaInAsSb/P-AlGaAsSb type-II thyristor heterostructures
A new type of light-emitting diodes (LEDs), a high-efficiency device based on an n-GaSb/p-GaSb/n-GaInAsSb/P-AlGaAsSb thyristor heterostructure, with the maximum emission intensity at wavelength λ = 1.95 μm, has b...
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Article
Long-wavelength photodiodes based on n-GaSb/n-GaInAsSb/p-AlGaAsSb heterostructures
Photodiodes sensitive in the wavelength ranges 1–2.5 μm and 1–4.8 μm at room temperature have been created on the basis of n-GaSb/n-GaInAsSb/p-AlGaAsSb double-junction heterostructures of two types. The broadband...
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Article
Semiconductor WGM lasers for the mid-IR spectral range
Disk-cavity whispering-gallery-mode (WGM) semiconductor lasers for the mid-IR spectral range have been developed. The specific properties of these devices are investigated.
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Article
Interfacial and interband lasing in an AnAs/InAsSbP heterostructure grown by vapor-phase epitaxy from metal-organic compounds
Sources of coherent radiation are fabricated on the basis of a double InAs/InAsSbP heterostructure, grown by vapor-phase epitaxy from metal-organic compounds, that includes a thick (3.3μm) active region. The s...
