Abstract
The luminescence properties of p-and n-type InAs layers grown by gas-phase epitaxy from metallorganic compounds at atmospheric pressure are investigated. Acceptor levels in InAs are identified with energies 350, 372, 387, and 397 meV. Optimal conditions are determined for the growth of InAs layers in a reactor of planetary type. At a growth temperature of 565 °C, InAs structures were obtained with abrupt p-n junctions. The structures grown were used to make light-emitting diodes operating at wavelengths of 3.1 µm (T=77 K) and 3.7 µm (T=300 K).
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Fiz. Tekh. Poluprovodn. 33, 1168–1172 (October 1999)
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Voronina, T.I., Zotova, N.V., Kizhayev, S.S. et al. Luminescence properties of InAs layers and p-n structures grown by metallorganic chemical vapor deposition. Semiconductors 33, 1062–1066 (1999). https://doi.org/10.1134/1.1187865
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DOI: https://doi.org/10.1134/1.1187865