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  1. No Access

    Article

    A study of cracking in GaN grown on silicon by molecular beam epitaxy

    It is observed that GaN layers grown on silicon substrates often crack. The crack characteristics in hexagonal GaN films on Si(111) has been characterized using scanning electron microscopy and Nomarski optica...

    R. Jothilingam, M. W. Koch, J. B. Posthill, G. W. Wicks in Journal of Electronic Materials (2001)

  2. No Access

    Article

    Photo Modified Growth of GaAs by Chemical Beam Epitaxy

    We report the photo modified growth of GaAs by chemical beam epitaxy at substrate temperatures in the range 335 to 670°C using triethygallium (TEG) and arsine. A mercury-xenon lamp (electrical power 200 W) pro...

    R. Jothilingam, T. Farrell, T. B. Joyce, P. J. Goodhew in MRS Online Proceedings Library (1998)

  3. No Access

    Article

    Deep level transient spectroscopy studies of undoped and Sn-doped Al x Ga1−x As epilayers grown by liquid-phase epitaxy

    R. Jothilingam, S. Saravanan, K. Baskar in Journal of Materials Science Letters (1996)

  4. No Access

    Article

    Investigations on the nucleation parameters of InGaAs grown on InP during LPE

    The initial stages of LPE growth of the InGaAs ternary compound on an InP substrate were analysed using the classical heterogeneous nucleation theory, incorporating lattice mismatch between the grown alloy and...

    R. Jothilingam, R. Dhanasekaran, P. Ramasamy in Journal of Materials Science: Materials in… (1994)