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  1. No Access

    Article

    Characterization of intersubband devices combining a nonequilibrium many body theory with transmission spectroscopy experiments

    In this paper we apply a microscopic nonequilibrium many body Keldysh Green′s functions approach to an analysis of complex intersubband optical materials and devices. The calculated absorption/gain spectra are...

    M. F. Pereira Jr, R. Nelander, A. Wacker… in Journal of Materials Science: Materials in… (2007)

  2. No Access

    Article

    Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors

    The influence of dielectric stress on the direct current (DC) electrical characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) has been investigated. Dual-frequency plasma deposition wa...

    W. S. Tan, P. A. Houston, G. Hill, R. J. Airey… in Journal of Electronic Materials (2004)

  3. No Access

    Article

    Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates

    The electrical performance of AlGaN/GaN metal-insulator semiconductor, heterostructure field-effect transistors (MISHFETs) were studied and compared to passivated and unpassivated HFETs. Record MISHFET current...

    W. S. Tan, P. A. Houston, G. Hill, R. J. Airey… in Journal of Electronic Materials (2003)