Skip to main content

9 Result(s)

within P. A. Houston Remove this filter

and

  1. No Access

    Article

    Investigations on Electrode-Less Wet Etching of GaN Using Continuous Ultraviolet Illumination

    Dry etching of GaN-based devices can introduce damage onto exposed layers of the semiconductor. In this paper, electrode-less wet etching of nominally undoped GaN is investigated in terms of light intensity, s...

    R. T. Green, W. S. Tan, P. A. Houston, T. Wang… in Journal of Electronic Materials (2007)

  2. No Access

    Article

    Abnormalities of the somatotrophic axis in the obese agouti mouse

    Abnormalities of the melanocortin system produce obesity and increased linear growth. While the obesity phenotype is well characterised, the mechanism responsible for increased linear growth is unclear. The so...

    N M Martin, P A Houston, M Patterson, A Sajedi… in International Journal of Obesity (2006)

  3. No Access

    Article

    Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors

    The influence of dielectric stress on the direct current (DC) electrical characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) has been investigated. Dual-frequency plasma deposition wa...

    W. S. Tan, P. A. Houston, G. Hill, R. J. Airey… in Journal of Electronic Materials (2004)

  4. No Access

    Article

    Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates

    The electrical performance of AlGaN/GaN metal-insulator semiconductor, heterostructure field-effect transistors (MISHFETs) were studied and compared to passivated and unpassivated HFETs. Record MISHFET current...

    W. S. Tan, P. A. Houston, G. Hill, R. J. Airey… in Journal of Electronic Materials (2003)

  5. No Access

    Article

    Effects of high temperature annealing on the device characteristics of Ga0.52In0.48P/GaAs and Al0.52In0.48P/GaAs heterojunction bipolar transistors

    GaInP/GaAs and AlInP/GaAs heterojunction bipolar transistor (HBT) structures were grown by low pressure metalorganic vapor phase epitaxy and annealed at various temperatures up to 675°C for 15 min. Subsequent ...

    H. K. Yow, P. A. Houston, C. C. Button, J. P. R. David… in Journal of Electronic Materials (1998)

  6. No Access

    Article

    Open-tube diffusion techniques for InP/LnGaAs heterojunctior bipolar transistors

    Open-tube diffusion techniques used between 450 and 600° C are described which involve the supply of diffusant from a vapour source (via a solution) and a solid evaporated metal source. Investigations of Zn in...

    P. Schuitemaker, P. A. Houston in Journal of Electronic Materials (1986)

  7. No Access

    Article

    Diffusion of Cd And Zn In InP between 550 and 650°C

    A large number of diffusions have been carried out in sealed quartz ampoules in the temperature range 550–650°C using Zn and Cd in InP. Three-fronted profiles were observed at 650°C for both Cd and Zn and the ...

    Naresh Chand, P. A. Houston in Journal of Electronic Materials (1982)

  8. No Access

    Article

    Growth and characterization of InGaAsP lattice-matched to InP

    The development of InGaAsP lattice-matched to InP as a suitable material for a range of electronic devices is reviewed. Currently accepted values of fundamental material parameters such as lattice constant, en...

    P. A. Houston in Journal of Materials Science (1981)

  9. No Access

    Article

    The growth of buffered GaAs mesfet structures by LPE

    Layers of LPE GaAs have been grown with background carrier levels in the low 1014 cm−3 range by systematic bakeouts of the Ga melts together with between-run loading in a dry N2 environment. High resistivity laye...

    P. A. Houston in Journal of Electronic Materials (1980)