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  1. No Access

    Article

    Quasi-planar integration of an InGaAsP/InP double collection region HBT and an edge-emitting led with Mn doped active layer

    A monolithically integrated InGaAsP/InP device including an HBT and an E-LED was fabricated with quasi-planar structure using Mn doped active layer and selective Zn diffusion as well as polyimide protection. 3...

    Li Weidan, Fu **aomei, Pan Huizhen in Journal of Electronics (China) (1988)

  2. No Access

    Article

    Low temperature open tube Zn diffusion in InP/InGaAs(P)

    To fabricate quasi-planar optoelectronic integrated circuits (OEICs), a new open tube Zn diffusion method has been developed. The characteristics of Zn diffusion in InP/InGaAs(P) heterostructure materials at c...

    Li Weidan, Pan Huizhen in Journal of Electronics (China) (1988)