Abstract
A monolithically integrated InGaAsP/InP device including an HBT and an E-LED was fabricated with quasi-planar structure using Mn doped active layer and selective Zn diffusion as well as polyimide protection. 300 ps rise time of the HBT was achieved together withBV ceo larger than 8V and the offset voltage smaller than 30 mV.
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Weidan, L., **aomei, F. & Huizhen, P. Quasi-planar integration of an InGaAsP/InP double collection region HBT and an edge-emitting led with Mn doped active layer. J. of Electron.(China) 5, 318–321 (1988). https://doi.org/10.1007/BF02778714
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DOI: https://doi.org/10.1007/BF02778714