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Quasi-planar integration of an InGaAsP/InP double collection region HBT and an edge-emitting led with Mn doped active layer
A monolithically integrated InGaAsP/InP device including an HBT and an E-LED was fabricated with quasi-planar structure using Mn doped active layer and selective Zn diffusion as well as polyimide protection. 3...
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Article
Low temperature open tube Zn diffusion in InP/InGaAs(P)
To fabricate quasi-planar optoelectronic integrated circuits (OEICs), a new open tube Zn diffusion method has been developed. The characteristics of Zn diffusion in InP/InGaAs(P) heterostructure materials at c...