6 Result(s)
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Article
Correlation Between the AlN Buffer Layer Thickness and the GaN Polarity in GaN/AlN/Si(111) Grown by MBE
In this work it is shown that thin AlN buffer layers cause N-polarity GaN epilayers, with a high inversion domains density. When the AlN thickness increases, the polarity of the epilayer changes to Ga. The use...
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Article
Comparative Study of Gan Movpe Growth Processes Using Two Different “Surface Preparation-Carrier Gas” Combinations
The growth modes and resulting microstructures of GaN films grown by Metalorganic Vapor Phase Epitaxy (MOVPE) on (0001) sapphire with either a simple nitridation of the surface and N2 as carrier gas or with a tre...
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Article
Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
Selective and lateral overgrowth by Metal Organics Vapour Phase Epitaxy (MOVPE) was carried out until coalescence to produce smooth and optically flat thick GaN layers. A GaN epitaxial layer is first grown usi...
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Article
Effect of the Nitridation of the Sapphire (0001) Substrate on the GaN Growth
The analysis of the sapphire surface nitridation by in situ reflection high-energy electron diffraction evidences the formation of a relaxed AIN layer. Its role on the early stage of the GaN growth is investigate...
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Article
Plan-view microstructures of Co/Ru bilayers
Plan-view microstructures of two Co/Ru bilayers with a composition of [Co12ÅRu45Å]2 and [Co40ÅRu35Å]2 have been studied by conventional and high resolution electron microscopy. Large differences in electron diffr...
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Article
Kinetics of SRO and LRO in FeAl Alloys with A2 and DO3 Structures
The kinetics of short and long-range ordering in FeA1x alloys have been investigated using resistometry. The results were obtained in the A2 solid solution (x = 0.10 and 0.17), in the DO3 ordered phase (x = 0.23,...
