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Article
Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
Selective and lateral overgrowth by Metal Organics Vapour Phase Epitaxy (MOVPE) was carried out until coalescence to produce smooth and optically flat thick GaN layers. A GaN epitaxial layer is first grown usi...
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Article
Alternative N precursors and Mg doped GaN grown by MOVPE
In this paper, we address two different aspects relevant to the growth of GaN. The first part concerns alternative nitrogen source whereas in the second part, we report experimental results on Mg do**. Sever...
