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Article
Open AccessProbabilistic tsunami forecasting for early warning
Tsunami warning centres face the challenging task of rapidly forecasting tsunami threat immediately after an earthquake, when there is high uncertainty due to data deficiency. Here we introduce Probabilistic T...
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Article
Open AccessEffect of Shallow Slip Amplification Uncertainty on Probabilistic Tsunami Hazard Analysis in Subduction Zones: Use of Long-Term Balanced Stochastic Slip Models
The complexity of coseismic slip distributions influences the tsunami hazard posed by local and, to a certain extent, distant tsunami sources. Large slip concentrated in shallow patches was observed in recent ...
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Article
Extracorporeal photopheresis for the treatment of steroid refractory acute GVHD
Extracorporeal photopheresis (ECP) was given to 23 patients with steroid-refractory acute GVHD (aGVHD, grade II (n=10), III (n=7) or IV (n=6)). The median duration of ECP was 7 months (1–33) and the median number...
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Article
Bulk-likeSi(001) atomic rearrangement artificially created at theGe/Sb/Si(001) interface
We report here on the electronic properties of the Ge/Sb/Si(001) interface formation studied by very high-energy-resolution photoemission spectro-scopy using synchrotron radiation. Surface- and bulk-sensitive ...
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Article
Analysis of infected human mononuclear cells by atomic force microscopy
The surfaces of the human lymphoid cells of the line H9 chronically infected with the Human Immunodeficiency Virus HIV-1, and of human monocytes acutely infectedin vitro withMycobacterium Tuberculosis (MTB) were ...
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Article
Recombination properties of clean “16 × 2” andPb- orAl-covered (110) silicon surfaces
The photoconductivity decay time constant τf was studied on the clean Si(110)-“16 × 2” surface and after adsorption of Al and Pb atoms. Significant changes of τf were observed after adsorption. Namely, τf increas...
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Chapter
The Problem of Schottky Barrier
A short historical survey will be made of metal-semiconductor research and of the most widely used theoretical models that have tried to explain the physical reasons for the formation of a Schottky barrier. Am...
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Article
Neutron emission under particular nonequilibrium conditions from Pd and Ti electrolytically charged with deuterium
We report on neutron emission in palladium and titanium electrolitically charged with deuterium. The detection of neutrons is observed after thermal treatment of the electrode. In the hypothesis that neutrons ...
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Chapter
Inverse-Photoemission Studies of Clean and Metal-Covered Semiconductor Surfaces
In this article we are summarizing our experimental bandstructure results on clean and metal-covered semiconductor surfaces, which we obtained employing the technique of inverse-photoepiission spectroscopy (IP...
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Chapter
Understanding and controlling heterojunction band discontinuities
We discuss two recent results on the microscopic nature and control of the band lineup at semiconductor-semiconductor interfaces. First, we identified a correlation between measured heterojunction band discont...
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Chapter
Heterojunction band discontinuity control by ultrathin intralayers
We present evidence that the band lineup at a semiconductor-semiconductor heterojunction interface can be changed and potentially controlled by an ultrathin metal intralayer. Synchrotron-radiation photoemissio...
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Chapter
Dipole-Induced Changes of the Band Discontinuities at the SiO2-Si Interface
We prove experimentally that the band lineup at the SiO2-Si interface can be modified by means of an intralayer. Hydrogen and cesium intralayers produce modifications of 0.5 and 0.25 eV in opposite directions. Po...
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Chapter
Angle-resolved photoemission measurements of band discontinuities in the GaAs-Ge heterojunction
The conduction- and valence-band discontinuities for the (110) GaAs-Ge heterojunction have been measured as ΔE c = 0.50 eV and ΔE ...
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Article
Photoemission Studies of Amorphous Silicon/Germanium Heterojunctions
The heterostructures obtained by growing a-Ge on a-Si:H and a-Si have been investigated by synchrotron radiation photoemission. We measured valence band and core level spectra on the heterostructures grown in ...
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Chapter and Conference Paper
Evidence for Disorder-Enhanced Core Excitons in Amorphous Semiconductors
We present experimental evidence that the L2,3 core excitonic binding energy in amorphous silicon systems increases with the degree of disorder. Since the excited-electron localization also increases with the deg...
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Chapter and Conference Paper
Microscopic Study of the GaP-Si Interface
Surface-sensitive experimental techniques are currently used for in-depth studies of the microscopic properties of particularly important heterojunction interfaces such as GaAs-Ge, ZnSe-Ge, GaAs-Ga1-xAlxAs, CdS-I...
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Chapter and Conference Paper
Geometrical Structure of Graphitic Carbon on Ni(111) Studied by Extended Energy Loss Fine Structure Spectroscopy (EELFS)
The geometry of adsorbed atoms on ordered surfaces may be determined by different experimental techniques. Among them the most used are ion scattering spectroscopy-(ISS) [1,2], surface extended X-ray absorptio...
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Article
Photoemission experiments on the valence band of transition metal trichalcogenides
We present a synchrotron radiation photoemission study of the upper-valence-band states of four ZrSe3-structure compounds: ZrS3, ZrSe3, ZrTe3 and HfSe3. The sulphide and selenide spectra exhibit a characteristic ...
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Chapter
Gold-Silicon Interface : Electron Energy Loss and Auger Spectroscopies Versus Gold Coverage
1 monolayer, 20 monolayers and 100 monolayers of gold have been deposited on Si(111)2×1. Electronic properties of such a system have been studied by Energy Loss Spectroscopy and Auger Spectroscopy versus annea...
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Article
Many-body contribution to XPS line asymmetry in palladium-hydrogen systems
The X-ray photoemission spectra of 3d-levels of Pd and Pd doped with several hydrogen concentrations are measured in order to determine the dependence of the asymmetry index of the lines
