Abstract
The conduction- and valence-band discontinuities for the (110) GaAs-Ge heterojunction have been measured as ΔE c = 0.50 eV and ΔE v = 0.25 eV by the angle-resolved ultraviolet photoemission (ARUPS) technique. These values are in good agreement with the theoretical predictions of Pickett et al.
Work supported by the Division of Chemical Sciences, Office of Basic Energy Sciences, U.S. Department of Energy.
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Perfetti, P., Denley, D., Mills, K.A., Shirley, D.A. (1988). Angle-resolved photoemission measurements of band discontinuities in the GaAs-Ge heterojunction. In: Margaritondo, G. (eds) Electronic Structure of Semiconductor Heterojunctions. Perspectives in Condensed Matter Physics, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-3073-5_9
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DOI: https://doi.org/10.1007/978-94-009-3073-5_9
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