-
Chapter and Conference Paper
Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra
The elemental distribution in InAs/GaAs quantum dots has been analysed using the d transition edges in the imaginary part of the dielectric function, ɛ2(E), obtained from the electron energy loss spectrum from a ...
-
Chapter and Conference Paper
Changes in plasmon peak position in a GaAs/Tn0.2Ga0.8As structure
We have investigated changes in the plasmon loss peak seen in electron energy loss spectra from a 15 nm In0.2Ga0.8As layer in GaAs using a VG HB601 UX FEG-STEM. We observe a relative shift in plasmon peak positio...
-
Article
High Resolution Analysis of Embedded Quantum Dots
A key piece of information in the understanding of quantum dot behaviour is the composition of the dot after any cap** and/or annealing processes. It is important to know the composition and uniformity of th...
-
Article
Photo Modified Growth of GaAs by Chemical Beam Epitaxy
We report the photo modified growth of GaAs by chemical beam epitaxy at substrate temperatures in the range 335 to 670°C using triethygallium (TEG) and arsine. A mercury-xenon lamp (electrical power 200 W) pro...
-
Article
S-Doped GaInAs Grown by Chemical Beam Epitaxy: Electrical and Structural Characterization
We report on the electrical and structural characterization of sulfur (S) doped Ga0.73In0.27As layers, grown on SI (001) GaAs substrates by chemical beam epitaxy. The room temperature free electron concentration ...
-
Article
A Refined Model for Threading Dislocation Filtering in InxGa1-xAs/GaAs Epitaxial Layers
A model is presented for the filtering of threading dislocations in InxGa1-xAs/GaAs epitaxial single layers by accurate control of the layer thickness. The model developed differs from previous models since the I...
-
Article
Letters to the Editor
-
Article
Interdiffusion Enhancement in AlGaAs/GaAs Superlattices in the Presence of Carbon
The mechanism of C diffusion through short period GaAs-AlGaAs superlattices has been investigated. The diffusion coefficient of C and the interdiffusion rates of the Ga and Al atoms were estimated by analysing...
-
Article
Tem Studies of Impurity Induced Defects in GaAs Grown by CBE
Defects generated from a thin impurity layer between a CBE-grown epilayer and its GaAs substrate have been studied by TEM. Line defects were observed to emerge randomly from the impurity layer in the various <...
-
Article
The Structure of GaAs Grown by Chemical Beam Epitaxy on Low-Temperature Cleaned Silicon
Chemical beam epitaxy (CBE) has been used to grow GaAs on silicon with a low defect density after etching in HF followed by a low temperature (600°C) in situ heat treatment. High resolution electron microscopy (H...
-
Article
Disordering of a Short Period GaAs-AlGaAs Superlattice by C Diffusion
Carbon do** of GaAs and AlGaAs is easily carried out during chemical beam epitaxy by controlling the proportions of the precursors trimethylgallium and triethylgallium. The diffusion of C introduced at level...
-
Article
The sputtering of rough cylinders; applications to the thinning of fibres for transmission electron microscopy
Thinning by ion-bombardment is a useful technique for the preparation of carbon and other fibres for transmission electron microscopy. It is shown that the presence of axial ridges on the initial fibre leads t...