-
Article
Latex Agglutination as an Alternative to the Hemagglutination Reaction of Influenza Viruses
Abstract—As an alternative to the classical method of erythrocyte hemagglutination, a latex agglutination assay based on the interaction of influenza viruses with the sialoglycoprotein fetuin immobilized on the s...
-
Article
Abrasive Flow Machining of the Internal Surfaces of 3D-Printed Curved Rectangular Waveguides
The abrasive flow machining of the internal surfaces of 3D-printed curved rectangular waveguides is studied experimentally, with a view to decreasing the surface roughness. Russian equipment and working media ...
-
Article
Many-Dimensional Duhamel Product in the Space of Holomorphic Functions and Backward Shift Operators
The system \(\mathcal D_0\) of partial backward shift operators in a countable inductive limit
-
Article
Studying the Performance of a Three-Axis Rate Table for Navigation System Tests
Abstract—A procedure for measuring the systematic error in angular positioning of a rate table platform based on goniometrical method is described. The method has been tested on a three-axis rate table STA-10. Po...
-
Article
Using a Single-Mode Approximation to Measure Magnetic Permeability in Strip Transmission Lines
A study is performed of using a transverse electromagnetic wave approximation to measure magnetic permeability in symmetric and asymmetric strip transmission lines via electrodynamic modeling. A longitudinal c...
-
Article
Osteogenic and Angiogenic Properties of Heparin as a System for Delivery of Biomolecules for Bone Bioengineering: a Brief Critical Review
The review considers complex, controversial, and individual effects of heparin and its derivatives on the bone and circulatory systems in dependence of the dose, the state of the cells and tissues of the recip...
-
Article
High-Voltage 4H-SiC-Based Avalanche Diodes with a Negative Bevel
High-voltage avalanche p+–p–n0–n+ diodes based on 4H–SiC are fabricated. The diodes are made in the form of mesa structures with flat side walls forming a negative bevel. The mesa structures are formed by the dry...
-
Article
High-Voltage Avalanche 4H-SiC Diodes with a Protective Semi-Insulating Area
High-voltage 4H-SiC diodes with controlled avalanche breakdown at a reverse voltage of 1460 V have been fabricated. To eliminate edge effects on the periphery of the diodes, a semi-insulating area was created by ...
-
Article
High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination
High-voltage (2000V) 4H-SiC Schottky diodes are fabricated. To suppress the premature breakdown at the edge of diode structures, a field plate is formed as the edge termination. In this plate, an insulator layer ...
-
Article
TCAD Simulation of High-Voltage 4H-SiC Diodes with an Edge Semi-Insulating Region
The TCAD simulation of high-voltage 4H-SiC-based p+–n–n+ diodes with an edge semi-insulating i-type region created via the complete compensation for do** donors in the n region by deep carrier traps (the energy...
-
Article
Open AccessFirst evidence of virus-like particles in the bacterial symbionts of Bryozoa
Bacteriophage communities associated with humans and vertebrate animals have been extensively studied, but the data on phages living in invertebrates remain scarce. In fact, they have never been reported for m...
-
Article
Pommiez Operator in Spaces of Analytic Functions of Several Complex Variables
Pommiez operators in spaces of analytic functions of several complex variables are examined. Linear continuous operators that commute with the system of Pommiez operators in the space A(Ω) of analytic functions i...
-
Article
Avalanche Breakdown in 4H-SiC Schottky Diodes: Reliability Aspects
We consider problems associated with the reliability of high-power 4H-SiC Schottky diodes (SDs) during short-term electric overloads in the reverse direction (for diodes operating in the pulsed avalanche regime)....
-
Article
The Effect of I155T, K156Q, K156E and N186K Mutations in Hemagglutinin on the Virulence and Reproduction of Influenza A/H5N1 Viruses
The continued circulation of influenza A virus subtype H5 may cause the emergence of new potential pandemic virus variants, which can be transmitted from person to person. The occurrence of such variants is ma...
-
Article
High-Voltage Fast Recovery Avalanche Diodes on Silicon Carbide
This paper describes the laboratory samples of high-voltage (1560 V) fast recovery (20 ns) avalanche diodes based on silicon carbide (SiC). It is shown that the fabricated diodes are capable of dissipating ene...
-
Article
Formation of SiC Mesastructures with Gently Slo** Sidewalls by Dry Selective Etching through a Photoresist Mask
We have demonstrated that SiC mesastructures with gently slo** sidewalls form with the help of selective reactive ion etching (RIE) of silicon carbide through a photoresist mask (slanted walls are formed dur...
-
Article
Edge-Termination Technique for High-Voltage Mesa-Structure 4H-SiC Devices: Negative Beveling
The prospects for the protection of high-voltage 4H-SiC-devices from edge breakdown via the formation of mesa structures with inclined walls (negative beveling) are considered. Numerical simulation of the spatial...
-
Article
Complexes Formed via Bioconjugation of Genetically Modified TMV Particles with Conserved Influenza Antigen: Synthesis and Characterization
Recently we obtained complexes between genetically modified Tobacco Mosaic Virus (TMV) particles and proteins carrying conserved influenza antigen such as M2e epitope. Viral vector TMV-N-lys based on TMV-U1 genom...
-
Article
Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode
Methods of micro-profiling of 4H-SiC are described: formation of mesa structures with inclined walls (off-vertical wall inclination angle exceeding 45°) by reactive ion etching; etching of mesa structures with a ...
-
Article
Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs
Low frequency noise is studied in 4H-SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) irradiated with 15-MeV protons. Irradiation is carried out at room temperature in the frequency range fr...
