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Article
Mushroom Mesa Structure for InAlAs–InGaAs Avalanche Photodiodes
Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes (APD) was proposed and investigated. APD heterostructrures were grown by molecular-beam epitaxy. Fabricated APDs with the sensitive area diameter...
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Article
Open AccessSimulation and Analysis of the Optical Characteristics of Cylindrical Micropillars with InAs/GaAs Quantum Dots
The optical characteristics of vertical cylindrical micropillars with AlGaAs distributed Bragg reflectors and InAs/GaAs quantum dots, which are designed for the fabrication of single-photon sources, have been ...
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Article
Source of Indistinguishable Single Photons Based on Epitaxial InAs/GaAs Quantum Dots for Integration in Quantum Computing Schemes
The characteristics of single photons emitted by columnar microstructures based on epitaxial microcavity heterostructures with distributed Bragg reflectors, which include self-organized InAs/GaAs quantum dots ...
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Article
Formation of SiC Mesastructures with Gently Slo** Sidewalls by Dry Selective Etching through a Photoresist Mask
We have demonstrated that SiC mesastructures with gently slo** sidewalls form with the help of selective reactive ion etching (RIE) of silicon carbide through a photoresist mask (slanted walls are formed dur...
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Article
InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics
A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely ...
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Article
Highly Efficient Semiconductor Emitter of Single Photons in the Red Spectral Range
The statistics of photon correlations in the emission of single InAs/AlGaAs quantum dots grown by molecular beam epitaxy and fitted with AlGaAs waveguide nanoantennas for efficient extraction of radiation is i...
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Article
Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations
The growth features of GaN nanorods on patterned c-sapphire substrates with a regular microcone array having a different density and base diameter in the ranges of (1–5) × 107 cm–2 and 2.5–3.5 μm, respectively, a...
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Article
Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks
We report a realization of room temperature lasing threshold of 1 μW in GaInP microdisk containing a few self-aggregated InP/GaInP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. InP/GaInP QD mi...
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Article
Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands
We report on fabrication and studies of composite heterostuctures consisting of an Al0.55Ga0.45N/Al0.8Ga0.2N quantum well and surface Al nanoislands, grown by plasma-assisted molecularbeam epitaxy on c-sapphire s...
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Article
Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range
The possibility of fabricating hybrid metamorphic heterostructures for vertical-cavity surfaceemitting lasers working in the 1300-nm spectral range is demonstrated. The metamorphic semiconductor part of the he...
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Article
Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures
The emissivity of unstrained quantum-dimensional InP/AlInAs nanostructures and their lasing properties in microdisk cavities prepared by wet etching have been studied. For as-prepared structures, it has been f...
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Article
InGaN/GaN light-emitting diode microwires of submillimeter length
Microcrystalline wire-like InGaN/GaN light-emitting diodes designed as core–shell structures 400–600 μm in length are grown by metal–organic vapor-phase epitaxy on sapphire and silicon substrates. The technolo...
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Article
Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
It has been shown that the interaction of 1 MeV protons at doses of (0.5–2) × 1014 cm–2 with transistor structures having a 2D AlGaN/GaN channel (AlGaN/GaN HEMTs) is accompanied not only by the generation of poin...
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Article
Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency
The spectral, threshold, and power characteristics of a microdisk laser 31 μm in diameter with an active region based on InAs/InGaAs quantum dots, operating in the continuous-wave (cw) mode at room temperature...
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Article
A study of distributed dielectric bragg reflectors for vertically emitting lasers of the near-IR range
Studies aimed at optimization of the design of a dielectric distributed Bragg reflector (DBR) produced by the reactive magnetron sputtering method for applications in near-IR vertical-cavity surface-emitting l...
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Article
Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pum**
The fundamental possibility of achieving temperature stability of laser emitters of 1.3-μm spectral range exhibiting a vertical microcavity and an active region based on InAs/InGaAs quantum dots (QDs) is inves...
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Article
Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture
The polarization characteristics of 850-nm vertical-cavity surface-emitting lasers (VCSELs) with intracavity contacts and a rhomboidal oxide current aperture are studied. It is found that radiation polarizatio...
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Article
Solar-blind Al x Ga1–x N (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter
Polarization-induced p-type do** of AlGaN layers with high aluminum content during plasmaassisted MBE growth has been studied. It is shown that a gradient of the AlN molar fraction in AlGaN (composition gradien...
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Article
The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy
We have studied the influence of technological parameters on the surface morphology and development of mechanical stresses in Al(Ga)N layers during their growth by metalorganic vapor phase epitaxy (MOVPE) on s...
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Article
Microdisk Injection Lasers for the 1.27-μm Spectral Range
Microdisk injection lasers on GaAs substrates, with a minimum diameter of 15 μm and an active region based on InAs/InGaAs quantum dots, are fabricated. The lasers operate in the continuous-wave mode at room te...
