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Article
Features of the Formation of Conductive Channels in Memristors Based on Solid Electrolytes
Experimental data on measurement of the resistance and electrical conductivity in the low-resistance mode of operation of a germanium-selenide-based memristor with a self-forming conductive channel in the form...
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Article
Temperature-Frequency Study of Germanium Selenide Memristors with a Self-Directed Current-Conducting Channel
The experimental data on the measurement of resistance and electrical conductivity in a low-resistance mode of operation of a memristor based on germanium selenide with a self-directed conductive channel in th...
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Article
Numerical Simulation of the Current–Voltage Characteristic of a Bipolar Hafnium-Oxide Memristor
In this paper, we develop a finite element model that allows calculating the current-voltage characteristic of a bipolar memristor based on Pt/HfO2/TiN hafnium oxide, which reflects both the high- and low-resista...
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Article
The Energy State of Epitaxial Layers in a Multilayer Heterostructure, Grown on a (001)GaAs Substrate
It is shown based on the structural analysis by reciprocal space map** and the experimental secondary ion mass spectrometry and transmission electron microscopy data that, along with lateral compressive stre...
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Article
Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate
On the basis of data on X-ray structural analysis performed by the method of reciprocal-space map** and investigations using secondary-ion mass spectrometry and transmission electron microscopy, it is shown tha...
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Article
Frequency Characteristics of GaN Field-Effect Transistors with Traps in the Barrier Layer
This paper presents a modified nonlinear model of the Fujii transistor that incorporates the gate capacitance values obtained by capacitance-voltage measurements. It is shown that the proposed model allows us ...
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Article
Phenomenological description of strain relief in step-graded metamorphic buffer layers based on In x Al1 − x As ternary solutions
Spatial distributions of the residual elastic strains in layers of step-graded metamorphic buffers of two different designs, grown via molecular beam epitaxy on the basis of In x ...
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Article
Comparative analysis of strain fields in layers of step-graded metamorphic buffers of various designs
Spatial distribution of residual elastic strain in the layers of two step-graded metamophic buffers of various designs, grown by molecular beam epitaxy from ternary InxAl1–xAs solutions on GaAs(001) substrates, i...
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Article
Electrical and thermal properties of photoconductive antennas based on In x Ga1 – x As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation
The results of studies of the electrical and thermal properties of photoconductive antennas for terahertz-radiation generation are reported; these antennas are fabricated on the basis of low-temperaturegrown G...
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Article
Stability analysis of monolithic integrated circuit of microwave signal converter to the influence of special factors
The research results of the resistance of signal converters with the operating frequency of 57–64 GHz, manufactured at the Institute of Ultrahigh Frequency Semiconductor Electronics on AlGaN/GaN/Al2O3 heterostruc...
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Article
Structure characterization of MHEMT heterostructure elements with In0.4Ga0.6As quantum well grown by molecular beam epitaxy on GaAs substrate using reciprocal space map**
The crystallographic parameters of elements of a metamorphic high-electron-mobility transistor (MHEMT) heterostructure with In0.4Ga0.6As quantum well are determined using reciprocal space map**. The heterostruc...
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Article
Nesting population structure of larks (Alaudidae, Aves) in typical semidesert habitats of the Caspian Lowland
The distribution of nesting populations of individual lark species by semidesert habitats in the Caspian Lowland is analyzed on the basis of data on the density of nesting pairs estimated by transect counts. T...
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Article
Study of a MHEMT heterostructure with an In0.4Ga0.6As channel MBE-grown on a GaAs substrate using reciprocal space map**
The crystallographic characteristics of the design elements of a metamorphic high-electron-mobility (MHEMT) heterostructure with an In0.4Ga0.6As channel are determined based on reciprocal space map**. The heter...
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Article
The structure of ground-nesting bird assemblage in the Saratov Transvolga region and its intracentennial and interannual dynamics
The dynamics of the structure of ground-nesting bird assemblage in the Transvolga steppe region are considered with regard to both intracentennial trends and interannual changes. It is shown that the structure...
