Abstract
Spatial distributions of the residual elastic strains in layers of step-graded metamorphic buffers of two different designs, grown via molecular beam epitaxy on the basis of In x Al1 − x As ternary solutions, are obtained by means of reciprocal space map**. It is shown that with allowance for work hardening, which affects strain relief in buffer layers and increases the strain in dislocation-free layers, the mechanism of strain relief in the final buffer steps, and the residual elastic strain in a buffer dislocation-free layer, are governed by the same phenomenological law as in a single-layer heterostructure.
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Original Russian Text © A.N. Aleshin, A.S. Bugaev, O.A. Ruban, N.V. Andreev, I.V. Shchetinin, 2017, published in Izvestiya Rossiiskoi Akademii Nauk, Seriya Fizicheskaya, 2017, Vol. 81, No. 11, pp. 1442–1450.
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Aleshin, A.N., Bugaev, A.S., Ruban, O.A. et al. Phenomenological description of strain relief in step-graded metamorphic buffer layers based on In x Al1 − x As ternary solutions. Bull. Russ. Acad. Sci. Phys. 81, 1295–1303 (2017). https://doi.org/10.3103/S106287381711003X
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DOI: https://doi.org/10.3103/S106287381711003X