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  1. No Access

    Article

    Plasmonic Metasurfaces for Controlling the Spectrum of Photoconductive THz Emitters

    Plasmonic metasurfaces for photoconductive antennas (PCAs) based on InAlAs/InGaAs superlattice heterostructures are proposed and fabricated. It is found by the measurements of the PCAs in a terahertz pulsed sp...

    I. A. Glinskiy, A. E. Yachmenev, D. V. Lavrukhin… in Nanobiotechnology Reports (2022)

  2. No Access

    Article

    Photoconductive THz Detector Based on New Functional Layers in Multi-Layer Heterostructures

    Characteristics of photoconductive antennas (PCAs) based on InGaAs/InAs/InAlAs superlattice heterostructures exhibiting different types of elastic strain in the layers are compared experimentally. THz signals,...

    A. E. Yachmenev, D. V. Lavrukhin, R. A. Khabibullin… in Optics and Spectroscopy (2021)

  3. No Access

    Article

    A Photoconductive THz Detector Based on a Superlattice Heterostructure with Plasmonic Amplification

    A highly sensitive terahertz (THz) detector based on a photoconductive antenna (PCA) with plasmonic amplification on the basis of an InGaAs/InAlAs superlattice heterostructure is proposed. A noticeable increas...

    A. V. Gorbatova, D. I. Khusyainov, A. E. Yachmenev… in Technical Physics Letters (2020)

  4. No Access

    Article

    Emission Efficiency of Terahertz Antennas with Conventional Topology and Metal Metasurface: A Comparative Analysis

    Characteristics of photoconductive antennas (PCAs)—radiation sources with conventional topology and a metal metasurface in the shape of a plasmonic grating made on the basis of InGaAs/InAlAs superlattice heter...

    D. V. Lavrukhin, A. E. Yachmenev, I. A. Glinskiy… in Optics and Spectroscopy (2020)

  5. No Access

    Article

    Plasmonic Photoconductive Antennas for Terahertz Pulsed Spectroscopy and Imaging Systems

    We propose a terahertz (THz) plasmonic photoconductive antenna (PCA) with a record height of its metal electrodes of h = 100 nm and a high aspect ratio of h/p = 0.5 (p is the period of the plasmonic grating) that...

    D. V. Lavrukhin, R. R. Galiev, A. Yu. Pavlov, A. E. Yachmenev… in Optics and Spectroscopy (2019)

  6. No Access

    Article

    The Role of Excitation Photons Energy in the Photoinduced Carrier Dynamics in InGaAs/InAlAs Superlattice Heterostructures

    The influence of excitation photons energy on the relaxation times of photoexcited carriers is studied. The involved relaxation mechanisms are evaluated and the reflection coefficient of the InGaAs/InAlAs supe...

    A. M. Buryakov, D. I. Khusyainov, E. D. Mishina… in Technical Physics Letters (2018)

  7. No Access

    Article

    Ultrafast Dynamics of Photoexcited Charge Carriers in In0.53Ga0.47As/In0.52Al0.48As Superlattices under Femtosecond Laser Excitation

    The results of experimental studies of the time dynamics of photoexcited charge carriers in In0.53Ga0.47As/In0.52Al0.48As superlattices grown by molecular-beam epitaxy on a GaAs substrate with a metamorphic buffe...

    D. S. Ponomarev, R. A. Khabibullin, A. N. Klochkov, A. E. Yachmenev… in Semiconductors (2018)

  8. No Access

    Article

    Epitaxial stresses in an InGaAs photoconductive layer for terahertz antennas

    The effect of epitaxial stresses on the excess-carrier dynamics and the terahertz radiation spectrum of the InyGa1–yAs films have been investigated by optical pump-probe and terahertz time-domain spectroscopy. It...

    D. I. Khusyainov, A. M. Buryakov, V. R. Bilyk, E. D. Mishina… in Technical Physics Letters (2017)

  9. No Access

    Article

    Electrical and thermal properties of photoconductive antennas based on In x Ga1 – x As (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation

    The results of studies of the electrical and thermal properties of photoconductive antennas for terahertz-radiation generation are reported; these antennas are fabricated on the basis of low-temperaturegrown G...

    D. S. Ponomarev, R. A. Khabibullin, A. E. Yachmenev, A. Yu. Pavlov… in Semiconductors (2017)

  10. No Access

    Article

    Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation

    The results of time-domain spectroscopy of the terahertz (THz) generation in a structure with an In0.38Ga0.62As photoconductive layer are presented. This structure grown by molecular-beam epitaxy on a GaAs substr...

    D. S. Ponomarev, R. A. Khabibullin, A. E. Yachmenev, P. P. Maltsev… in Semiconductors (2017)

  11. No Access

    Article

    Promising materials for an electronic component base used to create terahertz frequency range (0.5–5.0 THz) generators and detectors

    A THz transistor based on a metamorphic nanoheterostructure with generation frequency f max = 0.63 THz and a zigzag-shaped gate L g = 46 nm long is ...

    R. R. Galiev, A. E. Yachmenev, A. S. Bugaev… in Bulletin of the Russian Academy of Science… (2016)

  12. No Access

    Article

    Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates

    Electron transport and optical properties are studied for structures with atomic tin nanowires (Sn-NWs) on vicinal GaAs substrates with misorientation angles of 0.3 and 3° with respect to the exact (100) orien...

    R. A. Khabibullin, A. E. Yachmenev, D. V. Lavrukhin, D. S. Ponomarev… in Semiconductors (2016)

  13. No Access

    Article

    Metamorphic nanoheterostructures for millimeter-wave electronics

    Electrical parameters and root-mean-square surface roughness of the metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures with different indium contents (0.30–0.55) have been investigated. Field-effect transis...

    G. B. Galiev, R. A. Khabibullin, D. S. Ponomarev… in Nanotechnologies in Russia (2015)

  14. No Access

    Article

    Investigation of the optical properties of GaAs with δ-Si do** grown by molecular-beam epitaxy at low temperatures

    Molecular-beam epitaxy is used for the preparation of structures based on “low-temperature” grown GaAs with introduced d-Si do**. Specific features in the photon-energy range of 1.28–1.48 eV are observed in ...

    D. V. Lavrukhin, A. E. Yachmenev, A. S. Bugaev, G. B. Galiev… in Semiconductors (2015)

  15. No Access

    Article

    MHEMT with a power-gain cut-off frequency of f max = 0.63 THz on the basis of a In0.42Al0.58As/In0.42Ga0.58As/In0.42Al0.58As/GaAs nanoheterostructure

    The method of molecular-beam epitaxy is used to grow a In0.42Al0.58As/In0.42Ga0.58As/In0.42Al0.58As nanoheterostructure with a step-graded metamorphic buffer on a GaAs substrate. The root-mean-square value of the...

    D. V. Lavrukhin, A. E. Yachmenev, R. R. Galiev, R. A. Khabibullin… in Semiconductors (2014)

  16. No Access

    Article

    Wear resistance of a sintered antifriction material from bearing-production scrap

    1. The wear resistant antifriction steel ShKh15-powder-based material ZhGr1.5Kh1.5, which is obtained by sinteri...

    N. V. Krokhina, I. N. Veselov, T. A. Pumpyanskaya… in Metal Science and Heat Treatment (1981)

  17. No Access

    Article

    Technology for the production of roller-bearing races by the method of powder metallurgy

    1. A technology for the production (two-sided pressing in a rigid die under a pressure of 500 MPa, sintering at ...

    V. Ya. Bulanov, T. A. Pumpyanskaya, V. I. Deryabina… in Metal Science and Heat Treatment (1981)