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  1. No Access

    Chapter and Conference Paper

    Impact of High Temperature and Germanium Rate on the Electrical Performance of the SiGe Heterojunction Bipolar Transistor with DPSA-SEG Architecture

    The aim of this work is to model and analyze the electrical characteristics of a SiGe Heterojunction Bipolar Transistor HBT integrated in BiCMOS055 technology with DPSA-SEG (Double Poly silicon, Self-Aligned, ...

    Chems El Ghizlane Lachkhab, Maya Lakhdara… in Proceedings of the 2nd International Confe… (2024)

  2. No Access

    Article

    The Analysis of the Polysilicon base Position of the Thermal Resistance and the Self Heating Effects of 0.13 µm SiGe Heterojunction Bipolar Transistors

    The purpose of this paper is the study and the analysis of the impact of Polysilicon base on the phenomenon of self-heating and electrical performance for HBT SiGe transistor integrate from a 0.13 μm BiCMOS9 a...

    Abdelaaziz Boulgheb, Maya Lakhdara, Saida Latreche in Russian Microelectronics (2022)