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    Chapter and Conference Paper

    Impact of High Temperature and Germanium Rate on the Electrical Performance of the SiGe Heterojunction Bipolar Transistor with DPSA-SEG Architecture

    The aim of this work is to model and analyze the electrical characteristics of a SiGe Heterojunction Bipolar Transistor HBT integrated in BiCMOS055 technology with DPSA-SEG (Double Poly silicon, Self-Aligned, ...

    Chems El Ghizlane Lachkhab, Maya Lakhdara… in Proceedings of the 2nd International Confe… (2024)