Abstract
The aim of this work is to model and analyze the electrical characteristics of a SiGe Heterojunction Bipolar Transistor HBT integrated in BiCMOS055 technology with DPSA-SEG (Double Poly silicon, Self-Aligned, Selective Epitaxial Growth) architecture, using COMSOL Multiphysic software. The goal is to analyze the impact of high temperatures on component characteristics in the range from 300 to 450 K. At high temperatures, electrical performances decrease considerably, the maximum oscillation frequency/transition frequency drops from 397/334 to 343/268 GHz when the temperature ranges from 300 to 450 K. Secondly, we optimized the impact of the Germanium fraction rate introduced into the SiGe base of the HBT on electrical properties. For Germanium concentration less than 20%, static and dynamic performances improved but these performances decreased when germanium concentration is over 20%.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Chevalier P et al (2017) Si/SiGe: C and InP/GaAsSb heterojunction bipolar transistors for THz applications. Proc IEEE 105(6):1035–1050
Schröter M et al (2016) SiGe HBT technology: future trends and TCAD-based roadmap. Proc IEEE 105(6):1068–1086
Pfeiffer UR et al (2018) Current status of terahertz integrated circuits-from components to systems. In: 2018 IEEE BiCMOS and compound semiconductor integrated circuits and technology symposium (BCICTS). IEEE
Takai T et al (2017) IHP SAW technology and its application to microacoustic components. In: 2017 IEEE international ultrasonics symposium (IUS). IEEE
Sugiyama M et al (1989) A 40 GHz f/sub T/Si bipolar transistor LSI technology. In: International technical digest on electron devices meeting. IEEE
Hoeneisen B, Mead CJSSE (1972) Solid State Electron 15:819
Blanchet F (2007) Analyse et caractérisation des performances en puissance de transistors bipolaires à hétéro-jonction SiGe: C pour des applications de radiocommunications portables. Limoges
Jiang C et al (2016) A fully integrated 320 GHz coherent imaging transceiver in 130 nm SiGe BiCMOS. IEEE J Solid-State Circuits 51(11):2596–2609
Chung S et al (2018) Poly-crystalline silicon waveguide devices on hollow deep trench isolation in standard foundry bulk silicon process. In: Optical fiber communication conference. Optica Publishing Group
Rücker H, Heinemann BJSS (2018) High-performance SiGe HBTs for next generation BiCMOS technology. Semicond Sci Technol 33(11):114003
Chevalier P et al (2014) A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f T/370 GHz f MAX HBT and high-Q millimeter-wave passives. In: 2014 IEEE international electron devices meeting. IEEE
Van-Tuan V et al (2016) TCAD calibration of high-speed Si/SiGe HBTs in 55-nm BiCMOS. Electrochem Soc 75(8):113
Chevalier P et al (2015) Nanoscale SiGe BiCMOS technologies: From 55 nm reality to 14 nm opportunities and challenges. In: 2015 IEEE bipolar/BiCMOS circuits and technology meeting-BCTM. IEEE
Voinigescu SP et al (2012) Characterization and modeling of an SiGe HBT technology for transceiver applications in the 100–300-GHz range. IEEE Trans Microw Theory Tech 60(12):4024–4034
Lakhdara M et al (2014) Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications. 259:925–936
Selberherr S (1984) Analytical investigations about the basic semiconductor equations. In: Analysis and simulation of semiconductor devices. Springer, pp 127–148
Lacave T (2011) Transistor bipolaire Si/SiGe C en nœud CMOS avancé pour applications (sub)-millimétriques. Lille 1
Lachkhab CEG et al (2021) COMSOL simulation of a new generation of SiGe heterojunction bipolar transistor (HBT) integrated in a BiCMOS55nm technology. In: AIP conference proceedings. AIP Publishing
Bounemeur A, Chemachema M (2023) General fuzzy adaptive fault-tolerant control based on Nussbaum-type function with additive and multiplicative sensor and state-dependent actuator faults. Fuzzy Sets Syst 7:108616
Bounemeur A, Chemachema M, Essounbouli N (2018) Indirect adaptive fuzzy fault-tolerant tracking control for MIMO nonlinear systems with actuator and sensor failures. ISA Trans 1(79):45–61
Zahaf A, Bououden S, Chadli M, Boulkaibet I, Neji B, Khezami N (2023) Dynamic sensorless control approach for Markovian switching systems applied to PWM DC–DC converters with time-delay and partial input saturation. Sensors 23(15):6936
Zahaf A, Bououden S, Chadli M, Chemachema M (2022) Robust fault tolerant optimal predictive control of hybrid actuators with time-varying delay for industrial robot arm. Asian J Control 24(1):1–5
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2024 The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.
About this paper
Cite this paper
Lachkhab, C.E.G., Lakhdara, M., Boulgheb, A., Latreche, S. (2024). Impact of High Temperature and Germanium Rate on the Electrical Performance of the SiGe Heterojunction Bipolar Transistor with DPSA-SEG Architecture. In: Hamamda, S., Zahaf, A., Sementsov, Y., Nedilko, S., Ivanenko, K. (eds) Proceedings of the 2nd International Conference of Nanotechnology for Environmental Protection and Clean Energy Production. ICNEP 2023. Springer Proceedings in Materials, vol 45. Springer, Singapore. https://doi.org/10.1007/978-981-97-1916-7_29
Download citation
DOI: https://doi.org/10.1007/978-981-97-1916-7_29
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-97-1915-0
Online ISBN: 978-981-97-1916-7
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)