![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
Feto-maternal vitamin D status and infant whole-body bone mineral content in the first weeks of life
Compromised vitamin D status is common in pregnancy and may have adverse impacts on fetal development. The purpose of this study was to investigate the association of infant whole-body bone mineral content (WB...
-
Article
Isolated eyelid edema in Melkersson–Rosenthal syndrome: a case series
To report the clinicopathologic features of a series of patients with Melkersson–Rosenthal syndrome (MRS).
-
Article
“Magic” Nanostructures During the Early Stage of Thin Film Growth
The behaviors of thin indium films in the early stage of growth are studied in situ by a novel ultra-sensitive thin film scanning calorimetry technique. The films consist of ensembles of self-assembled indium ...
-
Article
Transcobalamin C776G genotype modifies the association between vitamin B12 and homocysteine in older Hispanics
A common polymorphism, C776G, in the plasma B12 transport protein transcobalamin (TC), encodes for either proline or arginine at codon 259. This polymorphism may affect the affinity of TC for B12 and subsequen...
-
Article
In situ transmission electron microscopy studies enabled by microelectromechanical system technology
We have designed and fabricated a standardized specimen holder that allows the operation of a microelectromechanical system (MEMS) device inside a transmission electron microscope (TEM). The details of the des...
-
Article
Pulque intake during pregnancy and lactation in rural Mexico: alcohol and child growth from 1 to 57 months
Objective: To examine maternal intake of a mildly alcoholic beverage (pulque) during pregnancy and lactation, and its potential effect on postpartum child growth and attained size.
-
Article
An Ultrafast Thin-Film Microcalorimeter with Monola Yer Sensitivity (J/m2)
We introduce a high-sensitivity (∼1 J/m2) scanning microcalorimeter that can be used to perform direct calorimetric measurements on thin film samples at ultrafast heating rate (∼104 °C/s). This novel microcalorim...
-
Article
Evolution of Microstructure During Low-Temperature Solid Phase Epitaxial Growth of SiξGe1-ξ on Si(001)
The evolution of microstructure during Au-mediated solid phase epitaxial growth of a SiGe alloy film on Si(001) (c-Si) was investigated by in situ resistance measurements, X-ray diffraction, conventional and high...
-
Article
Reaction Rate Kinetics and Film Textures of Palladium Silicide Formed on Hydrogenated Amorphous Silicon
The reaction rate kinetics of the thin film solid-state reaction between 120 nm of Pd and 100 or 300 nm of a-Si:H(18at%) to form Pd2Si were studied in situ using x-ray diffraction and four-point probe resistivity...
-
Article
Nanocrystalline SiC Formation From Sputter-Deposited Non-Equilibrium a-SixC1-x Alloys
There exists considerable interest in the synthesis of nanocrystalline SiC particles embedded in an a-SixC1-x:H matrix. This study investigated the formation of nanocrystalline SiC by annealing a non-equilibrium ...
-
Article
Wafer Bonding for Hybrid Circuit Technology Using Solid-State Reactions
In this study, we report a new wafer bonding technique for the integration of GaAs- and InP-based optical devices with prefabricated Si electronic devices in hybrid circuit technology. This technique uses a Au...
-
Article
Formation of TiSi2 During Rapid Thermal Annealing: In Situ Resistance Measurements at Heating Rates From 1°C/S to 100°C/S.
In VLSI technology, there is interest in monitoring the sequence of phase formation of TiSi2 (c-Ti ⇒ a-TiSi ⇒ C49 TiSb2 ⇒ C54 TiSi2), with the prospect of reducing the temperature of formation of the stable C54 T...
-
Article
Kinetics and Mechanism of the C49 to C54 Titanium Disilicide Polymorphic Transformation
The kinetics and mechanism of the C49 to C54 TiSi2 polymorphic transformation have been investigated in a temperature range from 660 to 720 °C using in situ sheet resistance measurement and transmission electron ...
-
Article
Initial Growth of Metastable Titanium Disilicide at Amorphous Silicide/Crystalline Silicon Interface
Initial stage of growth of metastable titanium disilicide (C49-TiSi2) was investigated by annealing Ti/doped polycrystalline Si bilayers deposited on oxidized Si wafers at 530°C and at a constant heating rate of ...
-
Article
CO-Sputtered Composite films Of YBa2Cu3O7-xand LaAIO3
We have grown thin film composites of and YBa2Cu3O7-x and LaAlO3 by co-sputtering. A film with composition of 10% LaAIO3 by volume had a transition temperature of 58K and critical current density of 1.2 x 106 A/c...
-
Article
Interdiffusion and Phase Relations in Ti-Aluminide/NB/Ti-Aluminide Composite Structures
We have studied interdiffusion and phase relations in two titanium aluminide/Nb/titanium aluminide composite structures at 1100 °C using solid state diffusion approach. The composite structures were prepared w...
-
Article
Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate
Solid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dy...
-
Article
Interfacial Reactions between In/Pd and GaAs
Interfacial microstructure of In/Pd ohmic contacts to n-GaAs was studied by various X-ray diffraction techniques and secondary ion mass spectroscopy (SIMS). Analysis of this interface after various annealing s...
-
Article
In-Situ Studies of the Formation Sequence of Silicides During Vacuum (10-7 TORR) Thermal Annealing of TI/Polysilicon Bilayers
The formation of suicides during the thermal reaction of Ti/polysilicon bilayers has been investigated using both in-stu four point sheet resistance measurements and ex-situ measurements including X-ray diffra...
-
Article
The Effect of Hydrogenated Amorphous Silicon on the Formation Rate Kinetics and Crystallography of Palladium Slicide Films
Samples of crystalline (111) silicon were coated with various thicknesses of hydrogenated amorphous silicon (a-Si:H), then coated with 100 nm of palladium. These samples were then reacted to form Pd2Si in vacuum....