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Article
Open AccessCharacteristics of discordance between amyloid positron emission tomography and plasma amyloid-β 42/40 positivity
Various plasma biomarkers for amyloid-β (Aβ) have shown high predictability of amyloid PET positivity. However, the characteristics of discordance between amyloid PET and plasma Aβ42/40 positivity are poorly u...
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Article
Open AccessAlpha-synuclein: a pathological factor with Aβ and tau and biomarker in Alzheimer’s disease
Alpha-synuclein (α-syn) is considered the main pathophysiological protein component of Lewy bodies in synucleinopathies. α-Syn is an intrinsically disordered protein (IDP), and several types of structural conf...
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Article
Open AccessBeauty of the beast: anticholinergic tropane alkaloids in therapeutics
Tropane alkaloids (TAs) are among the most valued chemical compounds known since pre-historic times. Poisonous plants from Solanaceae family (Hyoscyamus niger, Datura, Atropa belladonna, Scopolia lurida, Mandrago...
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Article
Raman Spectroscopy and Photocurrent of GaAsN/GaAs Multiple Quantum Wells
The Raman and photocurrent of the GaAsN/GaAs multiple quantum wells (MQWs) was studied. The Raman spectra are observed to be dominated by the GaAs longitudinal optical (LO) phonon mode as the strongest peaks s...
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Article
Decreased plasma α-synuclein in idiopathic Parkinson’s disease patients after adjusting hemolysis factor
Lewy bodies are pathological hallmarks for the diagnosis of Parkinson’s disease, where the core components are composed of aggregated forms of α-synuclein (α-syn). Although α-syn has been investigated as a pot...
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Article
Open AccessCSF total tau/α-synuclein ratio improved the diagnostic performance for Alzheimer’s disease as an indicator of tau phosphorylation
Recently, several studies suggested potential involvements of α-synuclein in Alzheimer’s disease (AD) pathophysiology. Higher concentrations of α-synuclein were reported in cerebrospinal fluid (CSF) of AD pati...
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Article
Schottky Barrier Parameters and Low-Frequency Noise Characteristics of Au/Ni Contact to n-Type β-Ga2O3
An Au/Ni/β-Ga2O3 Schottky barrier diode was fabricated on an 8.6-μm-thick lightly doped drift region grown on heavily doped Ga2O3 substrate, and its electrical and low-frequency noise characteristics were investi...
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Article
Variations of Dark and Photo Currents of Metal-Semiconductor-Metal Photodetectors Fabricated on Ge Epilayer Grown on Si Substrate Caused by the Dimension of Interdigitated Pt Finger Electrodes
Metal-semiconductor-metal (MSM) photodetectors (PDs) with interdigitated Pt finger electrodes were fabricated on Ge films grown epitaxially on a (100) Si substrate (Ge-on-Si) by rapid thermal chemical vapor de...
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Article
Dynamic changes of protein corona compositions on the surface of zinc oxide nanoparticle in cell culture media
The potential applications of nanomaterials used in nanomedicine as ingredients in drug delivery systems and in other products continue to expand. When nanomaterials are introduced into physiological environme...
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Article
Current Transport and 1/f Noise Characteristics in Ferromagnetic Permalloy/n-type Ge Schottky Contacts
The current transport mechanism in permalloy/n-type Ge Schottky diodes was studied over the temperature range from 200 to 400 K. At temperatures above 250 K, the forward current-voltage (I-V) characteristics of t...
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Article
Effect of Sn Composition in Ge1−xSn x Layers Grown by Using Rapid Thermal Chemical Vapor Deposition
The Ge1−xSn x layers were grown by using rapid thermal chemical-vapor deposition (RTCVD) on boron-doped p-type Si (100) substrates with Sn compositions up to x = 0.83%. In order...
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Article
The Low Temperature Epitaxy of Strained GeSn Layers Using RTCVD System
We have investigated the low temperature (LT) growth of GeSn–Ge–Si structures using rapid thermal chemical vapor deposition system utilizing Ge2H6 and SnCl4 as the reactive precursors. Due to inappropriate phenom...
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Article
Temperature dependence of the photocurrent in Ge1−x Sn x layers
The temperature dependence of the photocurrent in Ge1−x Sn x layers was measured for different Sn compositions (0.00 ≤ x ≤ 0.83%). As the Sn comp...
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Article
Transmission line pulse properties for a bidirectional transient voltage suppression diode fabricated using low-temperature epitaxy
Based on low temperature epitaxy technology, a bidirectional transient voltage suppression (TVS) diode with abrupt multi-junctions was developed. The bidirectional triggering voltage of ±16 V was controlled by...
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Article
A comparative study of IR Ge photodiodes with a Schottky barrier contact and metal-semiconductor-metal structure
We report the characterization of germanium (Ge) infrared photodiodes fabricated with a Schottky barrier contact and a interdigitated metal-semiconductor-metal (MSM) structure with gold electrodes on n-Ge subs...
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Article
Transient voltage suppressor diode designed for the protection of high-brightness GaN-based LEDs from various electrostatic discharge shocks
Transient voltage suppressor (TVS) diodes were fabricated using low-temperature epitaxy technology and were employed to improve the electrostatic discharge (ESD) strength of GaN light emitting diodes (LEDs). T...
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Article
Correlation of reverse leakage current conduction mechanism and electrostatic discharge robustness of transient voltage suppression diode
Five transient voltage suppression (TVS) diodes with breakdown voltages (BV) of 6, 7, 11, 13 and 15 V have been developed using low-temperature (LT) epitaxy technology and an LT fabrication process. The electr...
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Article
Electroluminescence of n-Ge/i-Ge/p-Si heterojunction PIN LEDs
A PIN Light Emitting Diode (LED) was fabricated from the n-Ge/i-Ge/p-Si heterojunction structure grown by using Rapid Thermal Chemical Vapor Deposition (RTCVD). Ge buffer layers were grown at 350 °C with a thi...
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Article
Effect of phosphorus do** concentration on n-type Ge layer growth
The n-type Ge layers with various phosphorus do** concentrations were grown on p-type Si (100) wafers by using Rapid Thermal Chemical Vapor Deposition (RTCVD). The root-mean-square (RMS) surface roughness of...
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Article
Do**-concentration dependence of a boron-doped p-type Ge layer grown on a Si (100) substrates by using RTCVD
Boron-doped p-type Ge layers were grown on n-type Si (100) wafers at various boron do** concentrations by using Rapid Thermal Chemical Vapor Deposition. The root-mean-square was surface roughness of p-type G...
