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Article
Transmission line pulse properties for a bidirectional transient voltage suppression diode fabricated using low-temperature epitaxy
Based on low temperature epitaxy technology, a bidirectional transient voltage suppression (TVS) diode with abrupt multi-junctions was developed. The bidirectional triggering voltage of ±16 V was controlled by...
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Article
Transient voltage suppressor diode designed for the protection of high-brightness GaN-based LEDs from various electrostatic discharge shocks
Transient voltage suppressor (TVS) diodes were fabricated using low-temperature epitaxy technology and were employed to improve the electrostatic discharge (ESD) strength of GaN light emitting diodes (LEDs). T...
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Article
Correlation of reverse leakage current conduction mechanism and electrostatic discharge robustness of transient voltage suppression diode
Five transient voltage suppression (TVS) diodes with breakdown voltages (BV) of 6, 7, 11, 13 and 15 V have been developed using low-temperature (LT) epitaxy technology and an LT fabrication process. The electr...
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Article
The Electrical Properties of Polyoxide Depending on the Polycrystalline-Si Formation Conditions
Prior to growth of polyoxide, amorphous-Si with a cap of low temperature oxide was annealed to improve the dielectric property of polyoxide. Current-electric field, critical electric field, critical electric f...
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Article
Low Temperature Characteristics of Hydrogenated Amorphous Silicon Field Effect Transistors
We investigated the temperature dependent characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT’s) at temperatures down to 20 K. With decreasing temperature, the threshold volta...
