Abstract
The n-type Ge layers with various phosphorus do** concentrations were grown on p-type Si (100) wafers by using Rapid Thermal Chemical Vapor Deposition (RTCVD). The root-mean-square (RMS) surface roughness of the n-type Ge layer increased from 0.167 to 14.131 nm when the phosphorus do** concentration was increased from 3 × 1016 to 3 × 1019 cm−3. High-Resolution X-ray Diffraction was used to evaluate the in-plane lattice constants and the tensile strain of the n-type Ge layer as functions of the phosphorus do** concentration. The presence of tensile strain was further confirmed from the Raman measurements, which revealed a strain reduction from 0.071 to 0.065% when the phosphorus do** concentration was increased from 3 × 1016 to 3 × 1019 cm−3. Moreover, a considerable increase in the photocurrent peak energy was observed.
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Kil, YH., Yang, H.D., Yang, JH. et al. Effect of phosphorus do** concentration on n-type Ge layer growth. Journal of the Korean Physical Society 64, 715–721 (2014). https://doi.org/10.3938/jkps.64.715
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DOI: https://doi.org/10.3938/jkps.64.715