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Article
Solution-processed highly adhesive graphene coatings for corrosion inhibition of metals
The corrosion of metals can be induced by different environmental and operational conditions, and protecting metals from corrosion is a serious concern in many applications. The development of new materials an...
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Article
SWCNT–Ag nanowire composite for transparent stretchable film heater with enhanced electrical stability
The mechanical stability of transparent and stretchable electrode materials is essential for their application in stretchable electronic devices. In this work, single-walled carbon nanotube (SWCNT)–silver nano...
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Article
Open AccessEffect of ribbon width on electrical transport properties of graphene nanoribbons
There has been growing interest in develo** nanoelectronic devices based on graphene because of its superior electrical properties. In particular, patterning graphene into a nanoribbon can open a bandgap tha...
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Article
Effect of reaction temperature and time during two-step selenization and sulfurization of Se-Coated CuGa/In precursors
In this work, the selenization of Mo/CuGa/In/Se (Se layer thickness: 1 μm) precursors followed by sulfurization was investigated. Particular emphasis was placed on the effect of the variation of the selenization ...
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Article
Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
The deposition of high-quality SiO2 films has been achieved through the use of both plasma-enhanced chemical vapor deposition (PE-CVD) and plasma-enhanced atomic layer deposition (PE-ALD) methods using H2Si[N(C2H
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Article
Open AccessSelf-Limiting Layer Synthesis of Transition Metal Dichalcogenides
This work reports the self-limiting synthesis of an atomically thin, two dimensional transition metal dichalcogenides (2D TMDCs) in the form of MoS2. The layer controllability and large area uniformity essential ...
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Article
Open AccessLow temperature solution process-based defect-induced orange-red light emitting diode
We report low-temperature solution-processed p-CuO nanorods (NRs)/n-ZnO NRs heterojunction light emitting diode (LED), exploiting the native point defects of ZnO NRs. ZnO NRs were synthesized at 90 °C by using...
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Article
Open AccessControllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
The effective synthesis of two-dimensional transition metal dichalcogenides alloy is essential for successful application in electronic and optical devices based on a tunable band gap. Here we show a synthesis...
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Article
Experimental and simulation study for ultrathin (∼100 μm) mono crystalline silicon solar cell with 156×156 mm2 area
A reduction in silicon material consumption in the photovoltaic industry is required for cost reduction. Using crystalline silicon wafers of less than 120 microns of thickness is a promising way for cost and m...
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Article
Controlled formation of oxide shells from GaN nanowires: Poly- to single-crystal
One-dimensional nanocable heterostructures consisting of GaN nanowire cores and Ga2O3 shells were prepared by thermal oxidation of single-crystal GaN nanowires in an oxygen atmosphere. Morphologically uniform GaN...
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Article
Tailoring of optoelectronic properties of InAs/GaAs quantum dot nanosystems by strain control
Full three-dimensional numerical analysis based on continuum elasticity and model solid theory has been carried out to evaluate some possible means of tailoring the optoelectronic properties of InAs/GaAs quant...
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Article
Fabrication of As-doped p-type ZnO thin film and ZnO nanowire inserted p–n homojunction structure
Arsenic-doped p-type ZnO (ZnO:As) thin films were grown on Si (100) wafer by E-beam evaporation. As-grown ZnO:As film exhibited n-type conductivity whereas on annealing the conduction of ZnO:As film changes to...
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Article
Effect of the deposition temperature and a hydrogen post-annealing treatment on the structural, electrical, and optical properties of Ga-doped ZnO films
The combined effects of the deposition temperature and a hydrogen post-annealing treatment on the structural, electrical, and optical properties of Ga-doped ZnO (GZO) films were investigated as a potential sub...
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Article
Photoresist ashing technology using N2/O2 ferrite-core ICP in the dual damascene process
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Chapter and Conference Paper
PCA-Based Neural Network Modeling Using the Photoluminescence Data for Growth Rate of ZnO Thin Films Fabricated by Pulsed Laser Deposition
The process modeling for the growth rate of pulsed laser deposition (PLD)-grown ZnO thin films was investigated using neural networks (NNets) based on the back-propagation (BP) algorithm and PCA-based NNets us...
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Article
Magnetic and magnetotransport properties in the n-type (Ga,Mn)N thin films
We present the magnetic and magnetotransport properties of epitaxial (Ga,Mn)N films with nominal Mn concentration (x=0.1–0.73%) grown by plasma-enhanced molecular beam epitaxy (PEMBE). X-ray diffraction (XRD) ...
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Article
The improvement of electrical properties of Pd-based contact to p-GaN by surface treatment
The surface treatment effect on the interfacial reaction and electrical property of Au/Pd contacts to p-GaN has been investigated. The contact resistance of Au/Pd contacts on boiling aqua regia treated p-GaN w...
