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    Article

    Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor

    The deposition of high-quality SiO2 films has been achieved through the use of both plasma-enhanced chemical vapor deposition (PE-CVD) and plasma-enhanced atomic layer deposition (PE-ALD) methods using H2Si[N(C2H

    Hanearl Jung, Woo-Hee Kim, Il-Kwon Oh, Chang-Wan Lee in Journal of Materials Science (2016)

  2. Article

    Open Access

    Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides

    This work reports the self-limiting synthesis of an atomically thin, two dimensional transition metal dichalcogenides (2D TMDCs) in the form of MoS2. The layer controllability and large area uniformity essential ...

    Youngjun Kim, Jeong-Gyu Song, Yong Ju Park, Gyeong Hee Ryu in Scientific Reports (2016)

  3. Article

    Open Access

    Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer

    The effective synthesis of two-dimensional transition metal dichalcogenides alloy is essential for successful application in electronic and optical devices based on a tunable band gap. Here we show a synthesis...

    Jeong-Gyu Song, Gyeong Hee Ryu, Su Jeong Lee, Sangwan Sim in Nature Communications (2015)