13 Result(s)
within
J. F. M. Westendorp
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Article
Surface Roughness of Silicon-Nitride Gate Insulators Deposited in a 40-MHZ Glow Discharge
The surface morphology of 40-MHz PECVD SiNx films is investigated. We report on the correlation between the deposition conditions, bulk properties, and surface roughness of these TFT insulators. The roughness is ...
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Article
Surface Roughness of Silicon-Nitride Gate Insulators Deposited in a 40-MHZ Glow Discharge
The surface morphology of 40-MHz PECVD SiNx films is investigated. We report on the correlation between the deposition conditions, bulk properties, and surface roughness of these TFT insulators. The roughness is ...
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Article
High Deposition Rate a-Si:H for the Flat Panel Display Industry
High deposition rates and good quality electrical properties and thickness uniformities over large areas are required for all three films (SiNx, a-Si:H and n+ a-Si:H) composing the thin film transistors (TFTs) fo...
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Article
High Deposition Rate a-Si:H for the Flat Panel Display Industry
High deposition rates and good quality electrical properties and thickness uniformities over large areas are required for all three films (SiNx, a-Si:H and n+ a-Si:H) composing the thin film transistors (TFTs) fo...
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Article
High Deposition Rate Pecvd Processes For Next Generation Tft-Lcds
The demand for lower cost per panel in TFT-LCD production is driving the PECVD market to deposition systems that combine high throughput and uptime with high yield. Today it is generally believed that a multic...
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Article
Influence of the Deposition Rate of the a-Si:H Channel on the Field-Effect Mobility of TFTs Deposited in a VHF Glow Discharge
Inverted-staggered hydrogenated amorphous-silicon thin-film transistors (a-Si:H TFTs) were deposited in a glow discharge with an excitation frequency of 60 MHz. At 13.56 MHz it has been reported that the field...
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Article
Avoiding Transient Diffusion of Boron in Si(100)
The diffusion of boron ions implanted in Si(100) during high temperature treatment has been studied by means of Secondary Ion Mass Spectrometry. The boron ions were implanted at energies of 5 and 10 keV along ...
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Article
Influence of Phosphorus Dopant Concentration on Recrystallization of Buried Amorphous Layers in SI(100) Produced by Channeled Implants
Buried amorphous layers are produced in Si(100) by implantation of 100 keV P+ and Si+ ions under channeling condition along the <100>-direction. Rutherford Backscattering Spectrometry in combination with channeli...
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Article
Evidence for a nucleation barrier in the amorphous phase formation by solid-state reaction of Ni and single-crystal Zr
In an ultrahigh vacuum (UHV) environment, thin poly crystalline Ni films have been deposited on a Zr (112) single-crystal surface. In contrast to the case of poly crystalline Ni and Zr films, formation of amor...
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Article
Laser alloying of Cu and Cr
CuCr multilayers, 0.5−1 /um total thickness, on Cu substrates have been laser irradiated. Threshold energy densities for complete alloying with different laser wavelengths and different multilayer structures w...
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Article
Metastable Alloy Formation By Ion Beam Mixing
In Ion Beam Mixing new surface alloys are produced by a combination of vacuum deposition and ion irradiation. One may wonder what the advantages are of this combination. Indeed one may ask:
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Article
An Ion-Scattering Study of Oxygen Indiffusion during Pulsed Laser Annealing/Cleaning of Silicon
Oxygen indiffusion during pulsed laser annealing of silicon has been studied using the 186 O(α,α) 186 O resonance at 3.045 MeV. Anneals were carried out with a Q–switched ruby laser, energy density of the pulses ...
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Article
A Comparison of Atomic Mixing Behaviour of Cu - Au and Cu - W Systems for Room Temperature and Low Temperature Irradiation
300 keV Kr ion irradiations with doses varying from 2 × 1015 to 2 × 1016 at/cm have been applied to initiate mixing of Cu-Au and Cu-W systems. As under normal thermodynamic conditions the Cu-Au system is miscible...
