Abstract
Oxygen indiffusion during pulsed laser annealing of silicon has been studied using the 186 O(α,α) 186 O resonance at 3.045 MeV. Anneals were carried out with a Q–switched ruby laser, energy density of the pulses 1.5 J/cm2, pulse width 20 ns. No evidence for oxygen indiffusion was found, neither for ion–implanted single pulse air–annealed silicon nor for a silicon wafer, cleaned with 8 laser shots in a UHV environment. In the latter case, the upper limit of the oxygen concentration was found to be 3.1 * 1018 at/cm3, which is lower than the solid solubility limit of oxygen in silicon. The non–occurrence of indiffusion is consistent with the dissolution time of SiO2 in Si, which is orders of magnitude longer than the melt duration of the Si–substrate.
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Visiting scientist on leave from Bei**g Normal University, Bei**g, China.
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Westendorp, J.F.M., Wang, Z.L. & Saris, F.W. An Ion-Scattering Study of Oxygen Indiffusion during Pulsed Laser Annealing/Cleaning of Silicon. MRS Online Proceedings Library 4, 255–260 (1981). https://doi.org/10.1557/PROC-4-255
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DOI: https://doi.org/10.1557/PROC-4-255