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Article
Faster Quenching by Silicon Pulsed Laser Annealing Under Water
A novel method of pulsed laser processing of ion-implanted silicon is presented, in which samples are irradiated in water ambient. The water layer in contact with the silicon during irradiationh as a considera...
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Article
A Channeling Study of Defect-Boron Complexes in Si
Si crystals were doped with 0.1–0.2 at% 11B in the near surface region by ion implantation followed by thermal diffusion at 1373 K or by ruby laser annealing. The position of the B atoms in the Si lattice was det...
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Article
Modification of engineering silicon nitride ceramics by energetic-ion bombardment
The microstructural and mechanical properties of hot-pressed Si3N4 ceramics after Si+ ion bombardent and annealing in N2 atmosphere have been investigated as a function of the ion fluence and the annealing temper...
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Article
Separating the Contributions of Hydrogen and Structural Relaxation to Damage Annealing in a-Si:H
This paper investigates the effects of ion implantation and annealing for pure (a-Si) and hydrogenated amorphous silicon (a-Si:H). The photocarrier lifetime in as-deposited a-Si:H decreases from ≥200 to 3 ps afte...
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Article
Annealing of Ion-Implanted Hydrogenated Amorphous Silicon: Stable and Removable Damage
Hydrogenated amorphous silicon (a-Si:H) films were irradiated with 1-MeV Si+ ions. The accumulation and annealing of ion damage was investigated by Raman scattering, optical reflection and transmission, and condu...
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Article
Ion beam synthesis of nitride layers in iron
Stoichiometric iron nitride layers have been synthesized by high dose, high energy nitrogen implantation into Fe using a two-step implantation process. First, a nitrogen preimplantation at ~100 °C is used to f...
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Chapter
Surface Science and Semiconductor Processing
After twenty years of surface science one may ask the question: what impact is there on semiconductor processing today? The answer is given by looking at developments in the equipment industry.
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Chapter
Dislocation formation in Si implanted at elevated temperature
The formation of pre-amorphization damage, dislocations formed by the agglomeration of Si interstitials, requires a minimum amount of damage in the crystal. The implanted dose for which this minimum amount of ...
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Article
Avoiding Dislocation Formation for B, P, and As Implants in Silicon
Implants of B, P, and As in Si lead to dislocation formation after 900°C annealing if a critical amount of implant damage is exceeded. However, it is possible to implant higher doses without forming dislocatio...
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Article
Vacancy-type and electrical defects in amorphous silicon probed by positrons and electrons
In summary, we have studied structural and electrical defects in amorphous Si by positron annihilation spectroscopy employing slow, variable energy positrons, and by lifetime measurements of optically generate...
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Article
C Implantation for Suppression of Dislocation Formation
This paper will show that annealing of Si implanted with moderate doses of 725 keV B results in the formation of secondary defects, the so-called category I dislocations. Surprisingly, 12C, with roughly the same ...
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Article
Picosecond Photocarrier Lifetimes in Ion-Irradiated Amorphous and Crystalline Silicon
Crystalline silicon (c-Si) and structurally relaxed amorphous silicon (a-Si) were implanted with 1 MeV Si+ at liquid nitrogen temperature. The photocarrier lifetime τ in the implanted samples was determined with ...
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Article
Structural Defects in Amorphous Silicon Probed by Sub-Picosecond Photocarrier Dynamics
The dynamics of a photogenerated electron-hole plasma in pure amorphous silicon (a-Si) in different stages of structural relaxation have been studied with sub-picosecond resolution using pump-probe reflectivit...
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Article
Epitaxy and Nucleation in Cu and Ag Doped Amorphous Si
The competition between solid phase epitaxy and random nucleation during thermal annealing of amorphous Si implanted with the fast diffusers Cu and Ag has been studied. For low concentrations of these impuriti...
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Article
Structural Relaxation of Amorphous Silicon Induced by High Temperature Annealing
We have studied structural relaxation at high temperature of both ion implanted and evaporated a-Si using Raman spectroscopy. The minimum value for the width of the main peak, which is an indicator for the sta...
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Article
Low temperature epitaxial NiSi2 formation on Si(111) by diffusing Ni through amorphous Ni–Zr
Although amorphous alloys are known to be good diffusion barriers, amorphous nickel-zirconium is shown to react with Si at relatively low temperatures. Diffusion of Ni at 350°C through an amorphous Ni–Zr buffe...
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Article
Avoiding Transient Diffusion of Boron in Si(100)
The diffusion of boron ions implanted in Si(100) during high temperature treatment has been studied by means of Secondary Ion Mass Spectrometry. The boron ions were implanted at energies of 5 and 10 keV along ...
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Article
Residual Stress in and Microstructure of Fe and Ti Surface Layers After 1 Mev N+ Implantation at High Dose
The effect of 1 MeV N+ irradiation on the microstructure of Fe and Ti specimens was investigated. The Fe and Ti specimens were implanted such that the N peak concentration (30 at.% in Fe, 45 at.% in Ti), was belo...
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Article
Gettering of Cu at Buried Damage Layers Made by Si Self Implantation
Channeled implants have been performed with lOOkeV28Si+ into p-type Si(100) to obtain a buried amorphous layer. Before and after recrystallization of the a-Si layer, Cu was implanted at an energy of 15 keV and a ...
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Chapter
Mechanisms of Ion Beam Mixing
Research on Ion Beam Mixing was triggered in 1973 when Van der Weg et al. (1) discovered Paladium Silicide formation during Ar ion irradiation of thin Pd films on Si substrates. This could not be explained by ...
