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  1. No Access

    Article

    Normal and anomalous conductivity hystereses in the channel of a transparent ferroelectric transistor

    Structures of the transparent ferroelectric field-effect transistor PZT/SnO2/Al2O3 with “normal” and “anomalous” conductivity hystereses of the channel are prepared and investigated. The “normal” modulation loop ...

    I. E. Titkov, I. P. Pronin, E. Yu. Kaptelov, L. A. Delimova… in Physics of the Solid State (2009)

  2. No Access

    Article

    White electroluminescence from ZnO/GaN structures

    White electroluminescence (EL) from ZnO/GaN structures fabricated by pulsed laser deposition of ZnO:In onto GaN:Mg/GaN structures MOCVD-grown on Al2O3 substrates has been observed. The white light is produced by ...

    I. E. Titkov, A. S. Zubrilov, L. A. Delimova, D. V. Mashovets… in Semiconductors (2007)

  3. No Access

    Article

    Laser deposition of gallium nitride films

    Insulating c-oriented hexagonal epitaxial gallium nitride (GaN) films have been obtained by means of pulsed laser sputtering of a gallium target in nonactivated nitrogen atmosphere. The GaN films were deposited o...

    I. V. Grekhov, I. A. Liniĭchuk, I. E. Titkov in Technical Physics Letters (2006)

  4. No Access

    Article

    A ferroelectric field effect transistor based on a Pb(ZrxTi1−x )O3/SnO2 heterostructure

    The possibility of fabricating a ferroelectric FET based on a Pb(ZrxTi1−x )O3/SnO2 (PZT/SnO2) heterostructure is investigated. Sb-doped epitaxial SnO2/Al2O3 thin film deposited by YAG laser ablation from a metal ...

    I. E. Titkov, I. P. Pronin, D. V. Mashovets, L. A. Delimova… in Semiconductors (2005)

  5. No Access

    Article

    Structural defects at the semiconductor-ferroelectric interface

    Structural defects at the interface between Pb0.95La0.05Ti0.8Zr0.2O3 and La1.85Sr0.15CuO4 were studied using the method of isothermal current relaxation. Two cases were considered: (a) the width of the defect-con...

    L. S. Berman, I. E. Titkov in Semiconductors (2004)

  6. No Access

    Article

    Light absorption and refraction due to intersubband transitions of hot electrons in coupled GaAs/AlGaAs quantum wells

    Variation of the absorption coefficient and refractive index of a system of tunnel-coupled GaAs/AlGaAs quantum wells in a longitudinal electric field is discovered and investigated in the spectral region corre...

    L. E. Vorob’ev, I. E. Titkov, D. A. Firsov, V. A. Shalygin, A. A. Toropov… in Semiconductors (1998)