Abstract
Structural defects at the interface between Pb0.95La0.05Ti0.8Zr0.2O3 and La1.85Sr0.15CuO4 were studied using the method of isothermal current relaxation. Two cases were considered: (a) the width of the defect-containing layer is much smaller than the width of the space-charge region and (b) the width of the defect-containing layer is greater than the width of the space-charge region. It is shown that, for the samples studied, the width of the defect-containing layer exceeds 50–100 Å, and the density of states for deep-level centers in the energy interval E v+(0.55–0.65) eV is about 3×1020 cm−3 eV−1; this value corresponds to a surface state density of about 2×1014 cm−2 eV−1. It is shown that the density of states for deep-level centers increases from the interface into the depth of the semiconductor.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 6, 2004, pp. 710–715.
Original Russian Text Copyright © 2004 by Berman, Titkov.
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Berman, L.S., Titkov, I.E. Structural defects at the semiconductor-ferroelectric interface. Semiconductors 38, 683–688 (2004). https://doi.org/10.1134/1.1766373
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DOI: https://doi.org/10.1134/1.1766373