-
Article
Moderne Methoden der Ventilationsauslegung von Pumpspeichergeneratoren
Numerical methods of ventilation design of hydro generators are continuously improved. The present paper shows a qualitative snap-shot of the state of development and a preview of enhancements in Andritz Hydro...
-
Article
Compound semiconductor interfaces obtained by direct wafer bonding in hydrogen or forming gas
A technique of direct bonding wafers up to 6-inch diameter without mechanical load after being heated to elevated temperatures in H2 or in non-flammable forming gas (5% H2/95% N2) was applied to GaAs and GaAs/GaP...
-
Article
Large-area wafer bonding of GaAs using hydrogen and ultrahigh vacuum atmospheres
Uniform direct or fusion wafer bonding of GaAs wafers up to 4 inch in diameter was achieved by means of two methods: (i) pre-heating, bonding at elevated temperatures and post-annealing in a H2 atmosphere (gas en...
-
Article
Microstructure of YBCO and YBCO/SrTiO3/YBCO* PLD Thin Films on Sapphire for Microwave Applications
A large-area pulsed laser deposition process for high-quality YBa2Cu3O7−δ (YBCO) thin films on both sides of R-plane sapphire substrates with CeO2 buffer layer is used routinely to optimize planar microwave filte...
-
Article
Strain Relaxation During Heteroepitaxy on Twist-Bonded Thin Gallium Arsenide Substrates
We realized “compliant” substrates in the square centimeter range by twist-wafer bonding of an (100) GaAs handle wafer to another (100) GaAs wafer with a several nm thick epitaxially grown GaAs layer followed ...
-
Article
Surface quality and laser-damage behaviour of chemo-mechanically polished CaF2 single crystals characterized by scanning electron microscopy
A significant increase in the ultraviolet laser-damage threshold of CaF2 (1 1 1) single-crystal surfaces after surface finishing by chemomechanical polishing (CMP) with colloidal silica has been demonstrated as c...
-
Article
Phase identification of micro and macro bubbles at the interface of directly bonded GaAs on sapphire
Direct wafer bonding (DWB) of 3″ GaAs and R-cut sapphire was performed in a microcleanroom using ultra pure water as cleaning agent. The initial bonding is mediated by Van der Waals forces and hydrogen bridges...
-
Article
A model of strain relaxation in hetero-epitaxial films on compliant substrates
these maximum relieved strains are φ0/2, φ0, 3φ0/2 and 2φ0 respectively, at the end of each of stages I–IV. Films relaxed in each stage are characterized by a specific set of macroscopic crystallographic feature...
-
Article
Wafer bonding of gallium arsenide on sapphire
) sapphire in a micro-cleanroom at room temperature under hydrophilic or hydrophobic surface conditions. Subsequent heating up to 500 °C increased the bond energy of the GaAs-on-sapphire (GOS) wafer pair close...
-
Article
Back-to-back substrate wafer bonding: A new approach to the fabrication of double-side coated wafers
We present a novel method for fabrication of double side coated wafers by back-to-back Direct Wafer Bonding (DWB). Two 3 inch sapphire wafers (R-cut) were coated each with YBa \(_2\) ...
-
Article
Configuration of ferroelectric domains in semiconducting BaTiO3 ceramics
-
Article
Twins and grain growth during liquid-phase sintering of BaTiO3 ceramics
-
Chapter and Conference Paper
Diabetologie
In der Langerhansschen Insel sind derzeit vier verschiedene, hormonproduzierende Zellen nachgewiesen: A-Zellen (Glukagon), B-Zellen (Insulin), D-Zellen (Somatostatin) und PP-Zellen (pancreatic polypeptide). Di...
