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Nanolayer of the A III2 B VI3 (111) phase with ordered cation vacancies on GaAs(111) and InAs(111)

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Abstract

The surface of GaAs(111) and InAs(111) substrates has been investigated by transmission and scanning electron microscopy after thermal treatment in selenium vapor. A pseudomorphic growth of single-crystal phases of indium selenide In2Se3(111) and gallium selenide Ga2Se3(111) is found; these compounds are crystallized into a sphalerite lattice with ordered stoichiometric cation vacancies. A model of an atomic surface is proposed for the In2Se3(111) and Ga2Se3(111) structures. The reconstruction of the (√3 × √3)-R30° surface of GaAs(111) and InAs(111) after treatment in Se vapor is considered within this model.

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Authors and Affiliations

  1. Voronezh State Technological Academy, Voronezh, 394036, Russia

    N. N. Bezryadin, G. I. Kotov, S. V. Kuzubov & B. L. Agapov

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  1. N. N. Bezryadin
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  2. G. I. Kotov
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  3. S. V. Kuzubov
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  4. B. L. Agapov
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Correspondence to N. N. Bezryadin.

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Original Russian Text © N.N. Bezryadin, G.I. Kotov, S.V. Kuzubov, B.L. Agapov, 2010, published in Kristallografiya, 2010, Vol. 55, No. 5, pp. 896–899.

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Bezryadin, N.N., Kotov, G.I., Kuzubov, S.V. et al. Nanolayer of the A III2 B VI3 (111) phase with ordered cation vacancies on GaAs(111) and InAs(111). Crystallogr. Rep. 55, 845–848 (2010). https://doi.org/10.1134/S106377451005024X

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  • DOI: https://doi.org/10.1134/S106377451005024X

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