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7 Result(s)

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  1. No Access

    Article

    Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors

    The influence of dielectric stress on the direct current (DC) electrical characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) has been investigated. Dual-frequency plasma deposition wa...

    W. S. Tan, P. A. Houston, G. Hill, R. J. Airey… in Journal of Electronic Materials (2004)

  2. No Access

    Article

    Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates

    The electrical performance of AlGaN/GaN metal-insulator semiconductor, heterostructure field-effect transistors (MISHFETs) were studied and compared to passivated and unpassivated HFETs. Record MISHFET current...

    W. S. Tan, P. A. Houston, G. Hill, R. J. Airey… in Journal of Electronic Materials (2003)

  3. No Access

    Chapter

    The Stark Effect and Electron-Hole Wavefunctions in InAs-GaAs Self-Assembled Quantum Dots

    New information on the electron-hole wavefunctions in InAs-GaAs self-assembled quantum dots is obtained from study of the quantum confined Stark effect. From the sign of asymmetry observed in the Stark effect,...

    M. S. Skolnick, P. W. Fry, I. E. Itskevich… in Optical Properties of Semiconductor Nanost… (2000)

  4. No Access

    Article

    Growth and characterization of (111)B InGaAs/GaAs multi-quantum well PIN diode structures

    High quality piezoelectric strained InGaAs/GaAs multi-quantum well structures on (111)B GaAs substrates have been grown by solid-source molecular beam epitaxy in a PIN configuration. 10K photoluminescence (PL)...

    JPR David, R. Grey, G. J. Rees, A. S. Pabla, T. E. Sale… in Journal of Electronic Materials (1994)

  5. No Access

    Chapter

    Resonant Tunnelling via the Bound States of Shallow Donors

    We have performed a systematic study of GaAs/(AlGa)As resonant tunnelling diodes in which the quantum well is intentionally δ-doped with Si donors. By comparing the I(V) of such devices with control samples we...

    J-W Sakai, P. H. Beton, M. Henini… in Semiconductor Interfaces at the Sub-Nanome… (1993)

  6. No Access

    Chapter and Conference Paper

    Resonant Tunnelling Devices in a Quantising Magnetic Field

    High magnetic fields, applied either parallel or perpendicular to the barriers, are extremely useful for investigating the electrical properties of resonant tunnelling structures [1–11]. By considering the cur...

    L. Eaves, E. S. Alves, M. Henini… in High Magnetic Fields in Semiconductor Phys… (1989)

  7. No Access

    Chapter and Conference Paper

    Magnetic Field Studies of Resonant and Non-resonant Tunnelling in n-(AlGa)As/GaAs Double Barrier Structures

    The electrical properties of a series of double barrier tunnelling devices with well widths between 5 and 60 nm are investigated. It is shown that the bistability effect in the current-voltage characteristics ...

    L. Eaves, E. S. Alves, T. J. Foster… in Physics and Technology of Submicron Struct… (1988)