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6 Result(s)

within G Hill Remove this filter Electronics and Microelectronics, Instrumentation Remove this filter

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  1. No Access

    Chapter and Conference Paper

    The nucleation structure for cracks in AlGaN epitaxial layers

    When an epitaxial layer is under tensile strain due to lattice mismatch, cracks are expected to form above a critical thickness. In the case of Group III nitrides grown on the sapphire (0001) plane, the epitax...

    R T Murray, P J Parbrook, G Hill, I M Ross in Microscopy of Semiconducting Materials (2005)

  2. No Access

    Article

    Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors

    The influence of dielectric stress on the direct current (DC) electrical characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) has been investigated. Dual-frequency plasma deposition wa...

    W. S. Tan, P. A. Houston, G. Hill, R. J. Airey… in Journal of Electronic Materials (2004)

  3. No Access

    Article

    Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates

    The electrical performance of AlGaN/GaN metal-insulator semiconductor, heterostructure field-effect transistors (MISHFETs) were studied and compared to passivated and unpassivated HFETs. Record MISHFET current...

    W. S. Tan, P. A. Houston, G. Hill, R. J. Airey… in Journal of Electronic Materials (2003)

  4. No Access

    Article

    Growth and characterization of (111)B InGaAs/GaAs multi-quantum well PIN diode structures

    High quality piezoelectric strained InGaAs/GaAs multi-quantum well structures on (111)B GaAs substrates have been grown by solid-source molecular beam epitaxy in a PIN configuration. 10K photoluminescence (PL)...

    JPR David, R. Grey, G. J. Rees, A. S. Pabla, T. E. Sale… in Journal of Electronic Materials (1994)

  5. No Access

    Chapter and Conference Paper

    Magnetotunnelling Spectroscopy to Measure the Electron and Hole ε(k) Dispersion Curves in the Quantum Well of Resonant Tunnelling Structures

    We investigate the effect of a large magnetic field, B, applied parallel to the plane of the barriers on the resonant I(V) currents of n- and p-type double barrier structures. The shifts in the electron resona...

    L. Eaves, R. K. Hayden, D. K. Maude… in High Magnetic Fields in Semiconductor Phys… (1992)

  6. No Access

    Chapter and Conference Paper

    Resonant Tunnelling Devices in a Quantising Magnetic Field

    High magnetic fields, applied either parallel or perpendicular to the barriers, are extremely useful for investigating the electrical properties of resonant tunnelling structures [1–11]. By considering the cur...

    L. Eaves, E. S. Alves, M. Henini… in High Magnetic Fields in Semiconductor Phys… (1989)