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Article
Spectral response and I-V characteristics of large well number multi quantum well solar cells
The inclusion of quantum wells in p-i-n solar cells leads to both an increase in photocurrent and a reduction in open circuit voltage. It has been shown that up to 50 shallow strain-balanced GaAsP/InGaAs quant...
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Article
Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors
The influence of dielectric stress on the direct current (DC) electrical characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) has been investigated. Dual-frequency plasma deposition wa...
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Article
Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates
The electrical performance of AlGaN/GaN metal-insulator semiconductor, heterostructure field-effect transistors (MISHFETs) were studied and compared to passivated and unpassivated HFETs. Record MISHFET current...
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Chapter
The Stark Effect and Electron-Hole Wavefunctions in InAs-GaAs Self-Assembled Quantum Dots
New information on the electron-hole wavefunctions in InAs-GaAs self-assembled quantum dots is obtained from study of the quantum confined Stark effect. From the sign of asymmetry observed in the Stark effect,...
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Article
Photocurrent Spectroscopy of InAs/GaAs Self-Assembled Quantum Dots: Observation of a Permanent Dipole Moment
Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots, studied as a function of applied electric field, is used to probe the nature of the confined electronic states. A field asymmetry of the quan...
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Article
1.55 Micron Emission from InAs/InP Self-Assembled Quantum Dots
Self-assembled InAs/InP and InAs/InGaAsP quantum dots (QDs) grown by metal-organic chemical vapour epitaxy (MOVPE) exhibit emission at 1.5–1.6 μm at room temperature. P-I-N diodes incorporating a single InAs/I...
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Chapter
Identification of Tunneling Mechanisms through GaAs/AlAs/GaAs Single Barrier Structires
We have identified the Γ-X and X-Γ intervalley tunneling mechanisms in GaAs/AlAs/GaAs single barrier p-i-n structures by employing electroluminescence and transfort techniques. We show that the Γ-X-Γ tunneling...
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Chapter
Magnetic and Electric Field Effects in Semiconductor Quantum Microcavity Structures
The effects of magnetic and electric field on the vacuum Rabi exciton-photon coupling in semiconductor quantum microcavity structures are presented. A number of phenomena are described including marked increas...
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Article
Book reviews
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Article
Growth and characterization of (111)B InGaAs/GaAs multi-quantum well PIN diode structures
High quality piezoelectric strained InGaAs/GaAs multi-quantum well structures on (111)B GaAs substrates have been grown by solid-source molecular beam epitaxy in a PIN configuration. 10K photoluminescence (PL)...
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Chapter
Resonant Tunnelling via the Bound States of Shallow Donors
We have performed a systematic study of GaAs/(AlGa)As resonant tunnelling diodes in which the quantum well is intentionally δ-doped with Si donors. By comparing the I(V) of such devices with control samples we...
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Chapter
Excited State Populations of the Quantum Wells of Double Barrier Resonant Tunneling Structures
The observation of electroluminescence recombination from electrons in both ground (El) and excited states (E2) of the quantum wells of double barrier resonant tunneling structures is reported. Analysis of the...
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Article
Vacancy Promoted Interdiffusion in Quantum Wells and Applications to Optoelectronic Devices
In this paper we shall look at a technique, known as impurity free vacancy diffusion (IFVD) for selectively altering the optoelectronic response of quantum well material after growth with a view to monolithic ...