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Article
Spectral response and I-V characteristics of large well number multi quantum well solar cells
The inclusion of quantum wells in p-i-n solar cells leads to both an increase in photocurrent and a reduction in open circuit voltage. It has been shown that up to 50 shallow strain-balanced GaAsP/InGaAs quant...
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Chapter and Conference Paper
The nucleation structure for cracks in AlGaN epitaxial layers
When an epitaxial layer is under tensile strain due to lattice mismatch, cracks are expected to form above a critical thickness. In the case of Group III nitrides grown on the sapphire (0001) plane, the epitax...
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Article
Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors
The influence of dielectric stress on the direct current (DC) electrical characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) has been investigated. Dual-frequency plasma deposition wa...
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Article
Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates
The electrical performance of AlGaN/GaN metal-insulator semiconductor, heterostructure field-effect transistors (MISHFETs) were studied and compared to passivated and unpassivated HFETs. Record MISHFET current...
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Article
Photocurrent Spectroscopy of InAs/GaAs Self-Assembled Quantum Dots: Observation of a Permanent Dipole Moment
Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots, studied as a function of applied electric field, is used to probe the nature of the confined electronic states. A field asymmetry of the quan...
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Article
1.55 Micron Emission from InAs/InP Self-Assembled Quantum Dots
Self-assembled InAs/InP and InAs/InGaAsP quantum dots (QDs) grown by metal-organic chemical vapour epitaxy (MOVPE) exhibit emission at 1.5–1.6 μm at room temperature. P-I-N diodes incorporating a single InAs/I...
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Article
Growth and characterization of (111)B InGaAs/GaAs multi-quantum well PIN diode structures
High quality piezoelectric strained InGaAs/GaAs multi-quantum well structures on (111)B GaAs substrates have been grown by solid-source molecular beam epitaxy in a PIN configuration. 10K photoluminescence (PL)...
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Chapter
Resonant Tunnelling via the Bound States of Shallow Donors
We have performed a systematic study of GaAs/(AlGa)As resonant tunnelling diodes in which the quantum well is intentionally δ-doped with Si donors. By comparing the I(V) of such devices with control samples we...
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Article
Vacancy Promoted Interdiffusion in Quantum Wells and Applications to Optoelectronic Devices
In this paper we shall look at a technique, known as impurity free vacancy diffusion (IFVD) for selectively altering the optoelectronic response of quantum well material after growth with a view to monolithic ...
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Chapter and Conference Paper
Magnetotunnelling Spectroscopy to Measure the Electron and Hole ε(k) Dispersion Curves in the Quantum Well of Resonant Tunnelling Structures
We investigate the effect of a large magnetic field, B, applied parallel to the plane of the barriers on the resonant I(V) currents of n- and p-type double barrier structures. The shifts in the electron resona...
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Chapter and Conference Paper
Resonant Tunnelling Devices in a Quantising Magnetic Field
High magnetic fields, applied either parallel or perpendicular to the barriers, are extremely useful for investigating the electrical properties of resonant tunnelling structures [1–11]. By considering the cur...
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Chapter and Conference Paper
Magnetic Field Studies of Resonant and Non-resonant Tunnelling in n-(AlGa)As/GaAs Double Barrier Structures
The electrical properties of a series of double barrier tunnelling devices with well widths between 5 and 60 nm are investigated. It is shown that the bistability effect in the current-voltage characteristics ...