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  1. No Access

    Article

    Deconvolution of the biexciton structure of monolayer MoSe2 in spectroscopic ellipsometric data: a comparison of maximum-entropy methods

    The detection of weak features in spectra remains a challenge. Differentiation remains a standard method, but maximum-entropy filters provide an alternative. Using dielectric-function data for MoSe2 as a test cas...

    Long V. Le, Tae Jung Kim, Young Dong Kim… in Journal of the Korean Physical Society (2024)

  2. No Access

    Article

    Extended Gaussian Filtering for Noise Reduction in Spectral Analysis

    We present a method of reducing noise in spectra that is based on eliminating low-order derivatives of reciprocal-space (RS) filter functions, yet ensuring that the functions roll off smoothly to minimize Gibb...

    V. L. Le, T. J. Kim, Y. D. Kim, D. E. Aspnes in Journal of the Korean Physical Society (2020)

  3. No Access

    Article

    Control of the oxidation kinetics of H-terminated (111)Si by using the carrier concentration and the strain: a second-harmonic-generation investigation

    We discuss recent results regarding the effects of strain, carrier type and concentration on the oxidation of H-terminated (111)Si. Second-harmonic-generation data show that this is a two-stage process where t...

    B. Gokce, K. Gundogdu, D. E. Aspnes in Journal of the Korean Physical Society (2012)

  4. No Access

    Article

    Ordinary and Extra-Ordinary Dielectric Function of 4h- and 6H-SiC in the 0.7 to 9.0 eV Photon Energy Range

    We report ordinary <ε⊥> and extra-ordinary <ε‖> dielectric function data of 4H- and 6H-SiC from 0.7 to 9.0 eV. These data, which were obtained by with spectroscopic ellipsometry, are in good qualitative agreement...

    O. P. A. Lindquist, K. Järrendahl, H. Arwin, S. Peters… in MRS Online Proceedings Library (2011)

  5. No Access

    Article

    Laser Crystallization of Deposited Silicon Films

    Silicon layers evaporated on crystalline Si have been crystallized by Q-switched Nd:YAG laser irradiation. A strong correlation was observed between the density of a-Si films and the quality of the epitaxial r...

    G. K. Celler, H. J. Leamy, D. E. Aspnes, C. J. Doherty… in MRS Online Proceedings Library (2011)

  6. No Access

    Article

    Relaxation Phenomena in GaN/AlN/6H−SiC Heterostructures

    We have developed a method to modulate the strain state (normally > 4 kbar, tensile) of moderately thick (≈2 μm) GaN based structures grown on 6H-SiC to a range 0 to -2 kbar of compressive stresses by introduc...

    N. V. Edwards, A. D. Batchelor, I. A. Buyanova… in MRS Online Proceedings Library (2011)

  7. No Access

    Article

    Determination and Critical Assessment of the Optical Properties of Common Substrate Materials Used in III-V Nitride Heterostructures with Vacuum Ultraviolet Spectroscopic Ellipsometry

    As a first step toward enabling the in-line metrology of III-V nitride heterostructure and materials, we present the optical constants of the two common substrate materials over an unprecendented spectral rang...

    N.V. Edwards, O.P.A. Lindquist, L.D. Madsen, S. Zollner… in MRS Online Proceedings Library (2001)

  8. No Access

    Article

    Real-time optical techniques and QMS to characterize growth in a modified commercial OMVPE reactor

    We describe a modified commercial OMVPE reactor that incorporates quadrupole mass spectrometry (QMS) with a broadband parallel-processing optical spectrometer that simultaneously performs spectroscopic ellipso...

    K. A. Bell, M. Ebert, S. D. Yoo, K. Flock, D. E. Aspnes in Journal of Electronic Materials (2000)

  9. Article

    Relaxation Phenomena in GaN/ AlN/ 6H-SiC Heterostructures

    We have developed a method to modulate the strain state (normally > 4 kbar, tensile) of moderately thick (∼2 μm) GaN based structures grown on 6H-SiC to a range 0 to -2 kbar of compressive stresses by introduc...

    N.V. Edwards, A.D. Batchelor, I.A. Buyanova… in MRS Internet Journal of Nitride Semiconduc… (1999)

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  10. No Access

    Article

    Low pH Chemical Etch Route for Smooth H-Terminated Si(100) and Study of Subsequent Chemical Stability

    To form atomically flat H-passivated Si(100) surfaces, wet chemical etching of sacrificial SiO2 layer has been examined. Roughness and chemical overlayer thickness, as monitored by ellipsometry shows a minima at ...

    B. J. Hinds, D. E. Aspnes, G. Lucovsky in MRS Online Proceedings Library (1997)

  11. No Access

    Article

    Variation of GaN Valence Bands with Biaxial Stress: Quantification of Residual Stress and Impact on Fundamental Band Parameters

    We provide the widest estimate thus far of the range of tensile and compressive stress (−3.8 to 3.5 kbar) that GaN epitaxial material can withstand before relaxation occurs, and an unambiguous determination of...

    N. V. Edwards, S. D. Yoe, M. D. Bremser, M. N. Horton… in MRS Online Proceedings Library (1996)

  12. No Access

    Article

    In-Plane Optical Anisotropies of AlxGa1−xN Films in Their Regions of Transparency

    GaN, AlxGa1−xN, and AlN layers exhibit interference oscillations and bandgap-related features in their reflectance-difference (-anisotropy) (RD/RA) spectra. We concentrate on the interpretation of interference-re...

    U. Rossow, N. V. Edwards, M. D. Bremser, R. S. Kern… in MRS Online Proceedings Library (1996)

  13. Article

    Growth, Do** and Characterization of AlxGa1-xN Thin Film Alloys on 6H-SiC(0001) Substrates

    Thin films of AlxGa1-xN (0.05 ≤ x ≤ 0.96) having smooth surfaces were deposited directly on both vicinal and on-axis 6H-SiC(0001) substrates. Cross-sectional TEM of Al0.13Ga0.87N revealed stacking faults near the...

    M. D. Bremser, W. G. Perry, T. Zheleva… in MRS Internet Journal of Nitride Semiconduc… (1996)

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  14. No Access

    Article

    Multilevel Approaches Toward Monitoring and Control of Semiconductor Epitaxy

    Various optical techniques have been developed over the last few years to allow real-time analysis of regions of importance for semiconductor epitaxy, in particular the unreacted and reacted parts of the surfa...

    D. E. Aspnes, N. Dietz, U. Rossow, K. J. Bachmann in MRS Online Proceedings Library (1996)

  15. No Access

    Article

    A Comparative Study of the Reflectance Difference Spectrum from Si(001) Using Reflectance Difference Spectroscopy /Low-Energy Electron Diffraction/Scanning Tunneling Microscopy

    From a comparative study using scanning tunneling microscopy, high-resolution low-energy electron diffraction, and reflectance difference spectroscopy, we investigate the optical anisotropy on clean and H-cove...

    Jia-Ling Lin, S.G. Jaloviar, L. Mantese, D.E. Aspnes… in MRS Online Proceedings Library (1995)

  16. No Access

    Article

    In-Situ and Ex-Situ Studies of Silicon Interfaces and Nanostructures by Ellipsometry and RDS

    We report surface-induced optical anisotropy (SIOA) spectra and dielectric function data of vicinal Si(001) surfaces using reflectance-difference spectroscopy (RDS) and spectroscopic ellipsometry (SE). To find...

    U. Rossow, L. Mantese, U. Frotscher, D. E. Aspnes… in MRS Online Proceedings Library (1995)

  17. No Access

    Article

    Towards a Microscopic Interpretation of the Dielectric Function of Porous Silicon

    The dielectric function of porous silicon layers depends strongly on the electronic properties of the nanostructure of the silicon skeleton. In this paper we discuss the main effects, as determined from spectr...

    U. Rossow, U. Frotscher, D. E. Aspnes, W. Richter in MRS Online Proceedings Library (1995)

  18. No Access

    Article

    Analysis of Strain in GaN on Al2O3 and 6H-SiC: Near-Bandedge Phenomena

    We report the dielectric functions of various GaN samples as measured by spectroscopic ellipsometry. Structure related to the A and B excitons is resolved at room temperature, in principle allowing strain to b...

    N. V. Edwards, M. D. Bremser, T. W. Weeks Jr, R. S. Kern… in MRS Online Proceedings Library (1995)

  19. No Access

    Article

    Real-time Optical Monitoring of GaxIn1−xP/GaP Heterostructures on Silicon

    In this paper we report the combined application of p-polarized reflectance spectroscopy (PRS), reflectance difference spectroscopy (RDS), and laser light scattering (LLS) to investigate the heteroepitaxy of GaxI...

    N. Dietz, U. Rossow, D.E. Aspnes, N. Sukidi… in MRS Online Proceedings Library (1995)

  20. No Access

    Article

    Origin of optical anisotropy in strained InxGa1−xAs/InP and InyAl1−yAs/InP heterostructures

    Optical anisotropy in mismatched InxGa1−xAs/InP and InyAl1−yAs/InP heterostructures has been investigated by variable azimuthal angle ellipsometry and reflectance difference spectroscopy. The two approaches are s...

    B. R. Bennett, J. A. del Alamo, M. T. Sinn, F. Peiró… in Journal of Electronic Materials (1994)

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