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Origin of optical anisotropy in strained InxGa1−xAs/InP and InyAl1−yAs/InP heterostructures

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Abstract

Optical anisotropy in mismatched InxGa1−xAs/InP and InyAl1−yAs/InP heterostructures has been investigated by variable azimuthal angle ellipsometry and reflectance difference spectroscopy. The two approaches are shown to yield strongly correlated results. A comparison to high resolution x-ray diffraction, transmission electron microscopy, and atomic force microscopy studies indicates that large optical anisotropies are associated with surface roughening that results from three-dimensional growth. Our findings demonstrate that fast and nondestructive measurements of optical anisotropy can provide important information about the growth mode and crystalline quality of strained epitaxial layers.

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Authors and Affiliations

  1. Naval Research Laboratory, 20375-5347, Washington, DC

    B. R. Bennett

  2. Massachusetts Institute of Technology, 02139, Cambridge, MA

    J. A. del Alamo & M. T. Sinn

  3. University of Barcelona, Diagonal 645-647, 08028, Barcelona, Spain

    F. Peiró & A. Cornet

  4. North Carolina State University, 27695-8202, Raleigh, NC

    D. E. Aspnes

Authors
  1. B. R. Bennett
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  2. J. A. del Alamo
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  3. M. T. Sinn
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  4. F. Peiró
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  5. A. Cornet
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  6. D. E. Aspnes
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Formerly with Massachusetts Institute of Technology.

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Bennett, B.R., del Alamo, J.A., Sinn, M.T. et al. Origin of optical anisotropy in strained InxGa1−xAs/InP and InyAl1−yAs/InP heterostructures. J. Electron. Mater. 23, 423–429 (1994). https://doi.org/10.1007/BF02671224

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  • DOI: https://doi.org/10.1007/BF02671224

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