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Article
Open AccessUltrafast structural dynamics of perovskite superlattices
Femtosecond x-ray diffraction provides direct insight into the ultrafast reversible lattice dynamics of materials with a perovskite structure. Superlattice (SL) structures consisting of a sequence of nanometer...
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Chapter and Conference Paper
Ultrafast Structural Dynamics of Polar Solids Studied by Femtosecond X-Ray Diffraction
We discuss recent progress in ultrafast x-ray diffraction, addressing photoinduced structural dynamics in ferroelectric superlattices and polar molecular crystals. Elongations of coupled phonon modes affecting...
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Chapter and Conference Paper
Femtosecond X-ray Diffraction Study of the Ultrafast Coupling between Magnetization and Structure in the Ferromagnet SrRuO3
Femtosecond optical excitation of magnetically ordered SrRuO3 nanolayers leads to an ultrafast demagnetization and a concomitant magnetoelastic contractive stress. The resulting ultrafast structural response of t...
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Chapter and Conference Paper
Diffraction contrast imaging and high resolution transmission electron microscopy of multiferroic thin films and heterostructures
Multiferroic materials exhibit simultaneous ferroelectric and ferromagnetic properties and are extensively studied because of their potential applications in multifunctional devices as well as for the understa...
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Chapter and Conference Paper
Ferroelectric materials and structures suitable for data storage: The role of microscopies in establishing preparation-microstructure-property relations
Among the various possible routes towards solid-state non-volatile random access memories (NV-RAMs) of high memory density, ferroelectric random access memories (FRAMs) offer very good prospects. Non-volatilit...
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Article
Accurate time delay determination for femtosecond X-ray diffraction experiments
We report on a versatile and accurate method for determining the time delay between femtosecond X-ray and optical pulses in an optical pump/X-ray diffraction probe experiment. Upon excitation with moderate pum...
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Chapter and Conference Paper
Probing strain propagation in nanolayered perovskites by diffraction of femtosecond x-rays
Propagating strain waves in SrTiO3, launched from PbZr0.2Ti0.8O3 films are measured by time-resolved x-ray diffraction. X-ray interference among contributions from differently strained regions allow to determine ...
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Article
A comparative microstructural study of compositionally up- and down-graded (Ba,Sr)TiO3 thin films epitaxially grown on (La,Sr)CoO3-covered MgO(100) substrates by pulsed laser deposition
We report a comparative study of the microstructure of compositionally graded (Ba1-xSrx)TiO3 (BST) films with two compositionally graded directions, up and down, with respect to the substrate, which were deposite...
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Article
Self-organized structure formation on the bottom of femtosecond laser ablation craters in glass
Using femtosecond laser pulses (150 fs duration at λ=400 nm) for ablation experiments on glass samples with and without enclosed silver nanoparticles, characteristic sub-micrometer surface topologies are obser...
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Article
Morphology dependence of the dielectric properties of epitaxial BaTiO3 films and epitaxial BaTiO3/SrTiO3 multilayers
Epitaxial BaTiO3 films and epitaxial BaTiO3/SrTiO3 multilayers were grown by pulsed laser deposition on vicinal surfaces of (001)-oriented Nb-doped SrTiO3 (SrTiO3 : Nb) single-crystal substrates. Atomic force mic...
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Article
Morphology and microstructure of all-epitaxial ferroelectric tri-layered (Bi,La)4Ti3O12/Pb(Zr0.4Ti0.6)O3/ (Bi,La)4Ti3O12 thin films on SrTiO3(011)
The morphology and microstructure of all-epitaxial (Bi,La)4Ti3O12/Pb(Zr0.4Ti0.6)O3/(Bi,La)4Ti3O12 (BLT/PZT/BLT) tri-layered ferroelectric films, grown on (011)-oriented SrTiO3 (STO) substrates by pulsed laser dep...
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Article
Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) substrates
Epitaxial SrBi2Ta2O9 (SBT) thin films with well-defined (116) orientation have been grown by pulsed laser deposition on Si(100) substrates covered with an yttria-stabilized ZrO2 (YSZ) buffer layer and an epitaxia...
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Article
100-nm lateral size ferroelectric memory cells fabricated by electron-beam direct writing
A fundamental limitation in the recent development of non-volatile ferroelectric memories of 64-Mbit to 4-Gbit densities was found to be the problem to scale ferroelectric capacitor cell sizes down below 1 μm2. I...
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Article
Quantitative ferroelectric characterization of single submicron grains in Bi-layered perovskite thin films
The local polarization state and the electromechanical properties of ferroelectric thin films can be probed via the converse piezoelectric effect using scanning force microscopy (SFM) combined with a lock-in t...
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Article
Microstructure and electrical properties of textured Sr0.51Ba0.48La0.01Nb2O6 thin films
Sr0.51Ba0.48La0.01Nb2O6 (SBLN) thin films were prepared on platinized silicon substrates by pulsed laser deposition (PLD) combined with annealing technique. The preferred orientation, surface morphology, composit...
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Article
Orientation dependence of ferroelectricity in pulsed-laser-deposited epitaxial bismuth-layered perovskite thin films
Thin films of bismuth-layered perovskites such as SrBi2Ta2O9, Bi4Ti3O12, and BaBi4Ti4O15 with preferred orientations were grown by pulsed laser deposition on epitaxial conducting LaNiO3 electrodes on single-cryst...
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Chapter
Switching of Ferroelectric Nanostructures
Ferroelectric domain structures of epitaxial SrBi2Ta2O9 (SBT), BaBi4Ti4O15 (BBiT) and Bi4Ti3O12 (BiT) thin films as well as PZT nanostructures have been imaged at the nanometer scale. The surface polarization sta...
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Chapter
Nano-Size Ferroelectric Structures
In the present work ferroelectric structures with lateral sizes as small as 100 nm were fabricated by electron beam direct writing. Switching of single 100 nm cells was achieved and piezoelectric hysteresis lo...
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Article
Wafer bonding of gallium arsenide on sapphire
) sapphire in a micro-cleanroom at room temperature under hydrophilic or hydrophobic surface conditions. Subsequent heating up to 500 °C increased the bond energy of the GaAs-on-sapphire (GOS) wafer pair close...
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Article
Back-to-back substrate wafer bonding: A new approach to the fabrication of double-side coated wafers
We present a novel method for fabrication of double side coated wafers by back-to-back Direct Wafer Bonding (DWB). Two 3 inch sapphire wafers (R-cut) were coated each with YBa \(_2\) ...