Abstract
In Si0.88Ge0.12/Si strained layers misfit dislocations formed during growth in small pads are generated at a significantly higher critical thickness than on extended areas, while pads of lateral size of 10 µm or smaller show no evidence of misfit dislocations at all. The SiGe layers investigated were selectively grown on patterned substrates with pad sizes from 2 µm to 1 cm. An elastic relaxation model was used to calculate the pad size dependence of the critical thickness. The main hypothesis of the model is that the density of misfit dislocations is solely affected by the elastic relaxation at the edges of small epitaxial areas. This equilibrium model is able to explain the observed absence of misfit dislocations on small pads, however it predicts a critical thickness for finite sizes much lower than the observed one.
Similar content being viewed by others
References
E.A. Fitzgerald, G.P. Pettit, R.E. Proaiio and D.G. Ast, J. Appl. Phys. 65, 2220 (1989).
D.B. Noble, J.L. Hoyt, C.A. King and J.F. Gibbons, Appl. Phys.Lett. 56, 51 (1990).
R. Hull, J.C. Bean, G.S. Higashi, M.L. Green, L. Peticolas, D. Bahnck and D. Brasen, Appl. Phys. Lett. 60, 1468 (1992).
L. Vescan, W. Jäger, C. Dieker, K. Schmidt, A. Hartmann and H. Lϋth, in Mechanism of Hétéroépitaxial Growth, edited by M.F. Chrisholm, B.J. Garrison, R. Hull and L.J. Schowalter (Mater. Res. Soc. Proc. 263, Pittsburgh, PA, 1992), pp. 23–28.
B.W. Dodson and J.Y. Tsao, Appl. Phys. Lett. 51, 1325 (1987).
F.K. LeGoues, K. Eberl and S.S. Iyer, Appl. Phys. Lett. 60, 2862 (1992).
T. Stoica and L. Vescan, submitted to J. Cryst. Growth.
S. Luryi and E. Suhir, Appl. Phys. Lett. 49, 140 (1986).
J.W. Matthews, S. Mader and T.B. Light, J. Appl. Phys. 41, 3800 (1979).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Vescan, L., Stoica, T., Dieker, C. et al. Reduction of Misfit Dislocation Density in Finite Lateral Size Si1-xGex Films Grown by Selective Epitaxy. MRS Online Proceedings Library 298, 45–50 (1993). https://doi.org/10.1557/PROC-298-45
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-298-45