Skip to main content

8 Result(s)

within C S Tan Remove this filter Electronics and Microelectronics, Instrumentation Remove this filter

and

  1. No Access

    Article

    UV/O3 assisted InP/Al2O3–Al2O3/Si low temperature die to wafer bonding

    Direct bonding of InP dies to Si wafer at low temperature utilizing Al2O3 high-κ dielectric as the interfacial material for homogeneous bonding is reported. The bonding technique is assisted with a UV/Ozone expos...

    P. Anantha, C. S. Tan in Microsystem Technologies (2015)

  2. No Access

    Article

    Effect of bonding temperature on hermetic seal and mechanical support of wafer-level Cu-to-Cu thermo-compression bonding for 3D integration

    Hermetic seal and mechanical support of wafer-level Cu-to-Cu thermo-compression bonding with different bonding temperature are analyzed in this work. The investigation consists of two parts: hermetic seal stud...

    J. Fan, D. F. Lim, L. Peng, K. H. Li, C. S. Tan in Microsystem Technologies (2013)

  3. No Access

    Article

    Cu–Cu Hermetic Seal Enhancement Using Self-Assembled Monolayer Passivation

    Low-temperature Cu–Cu thermocompression bonding enabled by self-assembled monolayer (SAM) passivation for hermetic sealing application is investigated in this work. Cavities are etched to a volume of 1.4 × 10−3 c...

    D. F. Lim, J. Fan, L. Peng, K. C. Leong, C. S. Tan in Journal of Electronic Materials (2013)

  4. No Access

    Article

    Effect of Prebonding Anneal on the Microstructure Evolution and Cu–Cu Diffusion Bonding Quality for Three-Dimensional Integration

    Electroplated copper (Cu) films are often annealed during back-end processes to stabilize grain growth in order to improve their electrical properties. The effect of prebonding anneal and hence the effective i...

    L. Peng, D.F. Lim, L. Zhang, H.Y. Li, C.S. Tan in Journal of Electronic Materials (2012)

  5. No Access

    Article

    Bonding parameters of blanket copper wafer bonding

    A reliable copper wafer bonding process condition, which provides strong bonding at low bonding temperature with a short bonding duration and does not affect the device structure, is desirable for future three...

    K. N. Chen, A. Fan, C. S. Tan, R. Reif in Journal of Electronic Materials (2006)

  6. No Access

    Article

    Copper bonded layers analysis and effects of copper surface conditions on bonding quality for three-dimensional integration

    In order to achieve copper wafer bonding with good quality, surface conditions of copper films are important factors. In this work, the effects of surface conditions, such as surface roughness and oxide format...

    K. N. Chen, C. S. Tan, A. Fan, R. Reif in Journal of Electronic Materials (2005)

  7. No Access

    Article

    The effect of forming gas anneal on the oxygen content in bonded copper layer

    Using a combination of copper (Cu) thermocompression bonding and silicon wafer thinning, a face-to-face silicon bi-layer layer stack is fabricated. The oxygen content in the bonded Cu layer is analyzed using s...

    C. S. Tan, K. N. Chen, A. Fan, R. Reif in Journal of Electronic Materials (2005)

  8. No Access

    Article

    Temperature and duration effects on microstructure evolution during copper wafer bonding

    Interfacial morphologies during Cu wafer bonding at bonding temperatures of 300–400°C for 30 min followed by an optional 30-min or 60-min nitrogen anneal were investigated by means of transmission electron mic...

    K. N. Chen, A. Fan, C. S. Tan, R. Reif in Journal of Electronic Materials (2003)