-
Article
Localized States in a-S1-x Cx: H and a-Si1−xN.:H Elucidated From LESR and CPM
We have carried out combined measurements of dark ESR, light-induced ESR and low photon energy absorption by Constant Photocurrent Method (CPM) for various thickness a-Si:H, a-Si1-x-.Nx Cx.:H and a-Si1-x-.Nx:H fi...
-
Article
Environment of Er Doped in a-Si:H and Its Relation with Photoluminescence Spectra
The crystal-field potential at the Er3+ ion surrounded by six oxygen ions is expanded in terms of polynomials. After converting it into equivalent angular momentum operators, the Stark-splitting of the 4I15/2 gro...
-
Article
Transport and Optical Characteristics of Al-rich AlO Film and its Application to a Nonvolatile Memory
We propose the new process for fabricating Al-rich Al2O3 thin film, which is used as a charge storage layer for non-volatile Al2O3 memory. Nanoscale Al-rich thin film is deposited using RF magnetron co-sputtering...
-
Article
Liquid-phase Epitaxial Growth of BiFeO3 Thick Films using an Infrared Irradiation
Epitaxial BiFeO3 (BFO) thick films were fabricated on SrTiO3 (STO) substrates by a simple liquid-phase epitaxy (LPE) growth technique. To avoid the evaporation of Bi, in this process, we used the lid substrate. A...
-
Article
Stark Splitting in Photoluminescence Spectra of Er in a-Si:H
The photoluminescence spectra due to Er ions doped in a-Si:H were decomposed into several lines. The 19-K spectrum was reproduced by adding four Gaussian lines whose linewidths were increased with decreasing t...
-
Article
Light-Intensity Dependence of the Staebler-Wronski Effect in a-Si:H with Various Densities of Defects
The light-intensity dependence of the photocreation of dangling bonds (DBs) were investigated for a-Si:H films with increasing density of defects before light soaking. Samples in which the density of neutral D...
-
Article
Electrical Properties of PZT Prepared by Pulsed Laser Ablation on Various Electrodes
The effect of various electrodes on the ferroelectric properties of lead-zirconate-titanate (Pb(Zr0.52Ti0.48)O3 PZT) films through the film structure is presented. All the PZT films were deposited by pulsed laser...
-
Article
Crystal Growth Modified by Pulsed Laser Irradiation on Growing Surface in Ba-Y-Cu-O Film Preparation by Laser Ablation
Ba2YCu3Ox superconducting films were prepared by Nd:YAG laser ablation, equipped with a second (ArF excimer) laser for irradiation onto the growing film surface. The irradiation onto the film during the depositio...
-
Article
Ferroelectricity of Lead-Zirconate-Titanate Thin Films Prepared by Laser Ablation
Lead-zirconate-titanate films were prepared by excimer laser ablation. The coercive field of films deposited on MgO substrates with an electrode was lower than that of films deposited on sapphire substrates. L...
-
Article
Thermally-Induced Change of Conductivity and Defect Density in Amorphous Silicon-Germanium Alloys
Thermally-induced metastable phenomena in amorphous silicon-germanium alloys were studied by conductivity and ESR measurements. Fast cooling from 250 °C reduced both dark- and photo-conductivities by a factor ...
-
Article
Influence of Laser Irradiation and Ambient Gas in Preparation of PZT Films by Laser Ablation
>Pb(Zr0.52Ti0. 48)O3 (PZT) films were prepared on r-plane sapphire substrates by the laser ablation method utilizing ArF excimer laser in O2 or N2O environment. The composition of the films deposited in O2 enviro...
-
Chapter and Conference Paper
Effect of N2O on Preparation of Ba2YCu3Ox Films by Excimer Laser Ablation with Laser Irradiation on Growing Surface
Superconducting Ba-Y-Cu-O films were prepared with an N2O ambient by the excimer laser ablation method. It was revealed that N2O ambient enhances the c-axis orientation for the film on crystalline Si substrate...
-
Article
ESR in 13C Enriched a-Si1−xCx:H
The effect of using the 13C isotope on the ESR signal in a-Si1−x Cx:H is investigated. The ESR linewidth increases with increasing the C content for a-Si1−x Cx.:H with 12C, while it is almost unchanged for a-Si1−...
-
Article
Thermal Equilibrium Defects in Hydrogenated Amorphous Silicon Based Alloy Films
Both the temperature dependence at elevated temperature and the increase after fast cooling from elevated temperature of the density of dangling bonds are measured by ESR for undoped hydrogenated amorphous sil...
