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Transport and Optical Characteristics of Al-rich AlO Film and its Application to a Nonvolatile Memory

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Abstract

We propose the new process for fabricating Al-rich Al2O3 thin film, which is used as a charge storage layer for non-volatile Al2O3 memory. Nanoscale Al-rich thin film is deposited using RF magnetron co-sputtering by setting an Al metal plate on an Al2O3 target. Al-rich Al2O3 shows a larger conduction current in I-V characteristics and larger optical absorption than stoichiometric Al2O3 due to the increased electron trap sites. The C-V characteristics of the Al-rich Al2O3 thin film show a large hysteresis window due to the charge trap** effect in the Al-rich structure.

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Authors and Affiliations

  1. NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, 243-0198, Atsugi, Japan

    Shunji Nakata & Yoshitada Katagiri

  2. Grad. School of Natural Sci. & Tech., Kanazawa University, 920-1192, Kakuma, Kanazawa, Japan

    Shingo Nagai, Minoru Kumeda, Takeshi Kawae, Akiharu Morimoto & Tatsuo Shimizu

Authors
  1. Shunji Nakata
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  2. Shingo Nagai
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  3. Minoru Kumeda
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  4. Takeshi Kawae
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  5. Akiharu Morimoto
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  6. Yoshitada Katagiri
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  7. Tatsuo Shimizu
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Nakata, S., Nagai, S., Kumeda, M. et al. Transport and Optical Characteristics of Al-rich AlO Film and its Application to a Nonvolatile Memory. MRS Online Proceedings Library 1056, 1157 (2007). https://doi.org/10.1557/PROC-1056-HH11-57

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  • DOI: https://doi.org/10.1557/PROC-1056-HH11-57

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