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Structural and optical properties of InAs quantum dots in AlGaAs matrix
Structural and optical properties of InAs quantum dots (QDs) grown in a wide-bandgap Al0.3Ga0.7As matrix is studied. It is shown that a high temperature stability of optical properties can be achieved owing to de...
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Article
Dependence of the binding energy of A(+) centers on quantum-well width in GaAs/AlGaAs structures
The luminescence of GaAs/AlGaAs multiple-quantum-well structures with different well widths, containing A(+) centers, was studied to determine the dependence of the center binding energy on quantum-well width. It...
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Article
Room-temperature 1.5–1.6 µm photoluminescence from InGaAs/GaAs heterostructures grown at low substrate temperature
Heterostructures with In(Ga)As/GaAs quantum dots and quantum wells grown at low substrate temperature were studied by reflection high-energy electron diffraction, transmission electron microscopy, and photolum...
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Article
Dependence of structural and optical properties of QD arrays in an InAs/GaAs system on surface temperature and growth rate
Properties of InAs QD arrays on a <100> GaAs surface in relation to the surface temperature and InAs growth rate are studied experimentally and theoretically. A kinetic model of QD formation in heteroepitaxial...
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Article
Spectroscopy of exciton states of InAs quantum molecules
Tunnel-coupled pairs of InAs quantum dots (quantum molecules) were formed by molecular beam epitaxy in a GaAs matrix. Optical and structural properties of the obtained quantum molecules were studied. Four mole...
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Article
Suppression of dome-shaped clusters during molecular beam epitaxy of Ge on Si(100)
Morphological properties of Ge nanoscale island arrays formed on the Si(100) surface during molecular beam epitaxy are studied using reflection high-energy electron diffraction and atomic-force microscopy. It ...
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Article
Properties of GaAs nanowhiskers grown on a GaAs(111)B surface using a combined technique
Arrays of GaAs whiskers on GaAs(111)B substrates were grown using a technique combining vacuum evaporation and molecular-beam epitaxy. The surface structural properties of the samples obtained were studied by ...
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Article
Optical phenomena in InAs/GaAs heterostructures with doped quantum dots and artificial molecules
Spectra of intraband absorption of polarized mid-IR light were investigated in undoped, p-, and n-doped InAs/GaAs quantum dots (QDs) covered with an InGaAs layer. Optical matrix elements for intraband electron an...
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Article
The engineering and properties of InAs quantum dot molecules in a GaAs matrix
Arrays of InAs quantum dot (QD) molecules in the GaAs matrix, which consist of pairs of vertically aligned InAs QDs, have been synthesized by molecular beam epitaxy. A study of the resulting structures by tran...
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Article
Localization of holes in an InAs/GaAs quantum-dot molecule
Deep-level transient spectroscopy is used to study the emission of holes from the states of a vertically coupled system of InAs quantum dots in p-n InAs/GaAs heterostructures. This emission was considered in rela...
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Article
Threshold behavior of the formation of nanometer islands in a Ge/Si(100) system in the presence of Sb
Atomic-force microscopy is used to study the behavior of an array of Ge islands formed by molecular-beam epitaxy on an Si (100) surface in the presence of an antimony flux incident on the surface. It is shown ...
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Article
The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy
The formation of GaAs and AlGaAs nanowhiskers using molecular-beam epitaxy on GaAs (111)B surfaces activated with Au is theoretically and experimentally studied. It is experimentally shown that nanowhiskers wh...
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Article
The transition from thermodynamically to kinetically controlled formation of quantum dots in an InAs/GaAs(100) system
The results of experimental and theoretical studies of quantum dot formation in an InAs/GaAs(100) system in the case of a subcritical width of the deposited InAs layer (1.5–1.6 monolayers) are presented. It is...
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Article
The Stark shift of the hole states in separate InAs/GaAs quantum dots grown on (100) and (311)A GaAs substrates
Deep-level transient spectroscopy is used to study charge-carrier emission from the states of separate quantum dots in InAs/GaAs p-n heterostructures grown on (100)-and (311)A-oriented GaAs substrates in relation...
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Article
The band structure and photoluminescence in a Ge0.8Si0.2/Ge0.1Si0.9 superlattice with vertically correlated quantum dots
The energy band diagram of the multilayered Ge0.8Si0.2/Ge0.1Si0.9 heterostructures with vertically correlated quantum dots is analyzed theoretically. With regard to fluctuations of the thickness layer in the colu...
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Article
The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy
The structural and optical properties of arrays of InAs quantum dots grown on GaAs substrates at relatively low temperatures (250 and 350°C) and with various degrees of misorientation of the surface are studie...
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Article
Diffusion-barrier contacts based on the TiN and Ti(Zr)Bx interstitial phases in the microwave diodes for the range of 75–350 GHz
A new technology for thermally stable ohmic contacts with diffusion barriers based on the amorphous TiN and Ti(Zr)Bx interstitial phases is used in the development of microwave diodes for the millimeter region (w...
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Article
Circularly polarized photoluminescence related to A(+) centers in GaAs/AlGaAs quantum wells
Magnetic-field-induced circular polarization of the photoluminescence peak related to A(+) centers in quantum wells is measured for the first time. It is shown that, in a magnetic field of 4 T, the polarization d...
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Article
Resonances related to an array of InAs quantum dots and controlled by an external electric field
Photoluminescence of multilayer structures with InAs quantum dots grown in the p-n junction in GaAs by molecular-beam epitaxy is studied. Formation of vertical columns of quantum dots is verified by the data of t...
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Article
Wannier-stark effect in Ge/Si quantum dot superlattices
Deep level transient spectroscopy (DLTS) measurements were performed to study electron emission from quantum states in a 20-layer Ge quantum-dot superlattice (QDSL) in a Ge/Si p-n heterostructure. It was establis...